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Plasma etching equipment and method

A technology of plasma and etching equipment, applied in the field of plasma etching equipment, can solve the problem of inability to meet the etching depth and other problems, and achieve the effects of high etching rate, high etching selection ratio and simple process

Active Publication Date: 2017-02-08
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The maximum etching selection ratio that can be achieved by etching in a single step is about 30:1, which cannot meet the application of high etching depth

Method used

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  • Plasma etching equipment and method
  • Plasma etching equipment and method
  • Plasma etching equipment and method

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Embodiment Construction

[0074] In order to solve the problem of relatively low etching selectivity, a plasma etching device and an etching method are proposed to achieve a higher etching selectivity ratio and a higher etching rate.

[0075] The above and other technical features and advantages of the present invention will be described in more detail below in conjunction with the accompanying drawings.

[0076] see figure 1 As shown, it is a schematic diagram of Embodiment 1 of the plasma etching equipment of the present invention. The plasma etching equipment includes a loading and unloading chamber 100 , a transport chamber 200 and an integrated process chamber 300 .

[0077] The wafer 10 is placed in the loading and unloading chamber 100 and sent into the integrated process chamber 300 through the transfer chamber 200 .

[0078] The integrated process chamber 300 includes a deposition reaction chamber 500 and an etching reaction chamber 600 . In the integrated process chamber 300 , the wafer unde...

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Abstract

A plasma etching device and method. The plasma etching device comprises: a comprehensive process cavity (300), comprising a deposition reaction cavity (500) used for depositing a layer of film (4) on the surface of a mask (2); an etching reaction cavity (600), used for etching a substrate (10), wherein the etching stops when the film (4) is totally consumed; a substrate conveying apparatus, used for conveying the substrate (10), so that the substrate (10) alternately enters the deposition reaction cavity (500) to deposit the film (4) and enters the etching reaction cavity (600) to perform etching, till the shape and appearance of the substrate (10) after etching reaches a required etching depth. The plasma etching device and method not only has a high etching rate, but also can increase an etching selection ratio of the substrate (10) to the mask (2).

Description

technical field [0001] The invention relates to the field of plasma etching equipment, in particular to a plasma etching equipment and a plasma etching method with a relatively large etching depth. Background technique [0002] In the prior art, in plasma dry etching technology, fluorine-based gases such as SF6, C4F8, and C5F8 are mostly used as etching reaction gases. In order to obtain the required pattern, other materials need to be used as etching masks. Membrane materials include photoresist, silicon, metal, and the like. [0003] Since most MEMS devices require a large etching depth, the etching selection ratio between the wafer and the mask needs to be considered in the etching process design. In order to achieve a greater etching depth with a limited mask thickness, it is necessary to increase the etching selectivity as much as possible. The way to improve the etching selectivity ratio can be through the selection of mask material or optimization of the etching pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32B81C1/00
CPCH01J37/32082H01J37/32715H01J37/32733H01L21/6719H01L21/67751H01L21/68764H01L21/68771
Inventor 杨盟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD