Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor encapsulation structure and forming method thereof

A packaging structure and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. The effect of small density

Active Publication Date: 2015-05-13
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing chip packaging structure occupies a large volume and low integration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor encapsulation structure and forming method thereof
  • Semiconductor encapsulation structure and forming method thereof
  • Semiconductor encapsulation structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The chip occupied by the existing chip packaging structure has a relatively large volume and a low degree of integration, and it is not possible to package multiple chips together.

[0030] Therefore, an embodiment of the present invention provides a semiconductor packaging structure and a method for forming the same. The packaging of multiple semiconductor chips is realized through a through-hole interconnection structure, which saves the volume occupied by the chip packaging structure and improves the integration of the chip packaging structure. .

[0031] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present invention in detail, for convenience of explanation, the schematic diagrams will not be partially enlarged according to the general scale, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor encapsulation structure and a forming method thereof. The semiconductor encapsulation structure comprises a plurality of semiconductor chips, a sealing material layer, a through hole interconnecting structure, a first rewiring layer, a first lug, a second rewiring layer and a second lug, wherein bonding pads are arranged on the surfaces of the semiconductor chips; the sealing material layer is used for sealing the plurality of semiconductor chips, and the bonding pads on the surfaces of the semiconductor chips are exposed from the frontage of the sealing material layer; the through hole interconnecting structure is located in the sealing material layer between the adjacent semiconductor chips and penetrates through the thickness of the sealing material layer; the first rewiring layer is located on the frontage of the sealing material layer and connected with the bonding pads and the top surface of the through hole interconnecting structure; the first lug is located on the first rewiring layer; the second rewiring layer is located on the back of the sealing material layer and connected with the bottom surface of the through hole interconnecting structure; the second lug is located on the second rewiring layer. The semiconductor encapsulation structure is small in volume and high in integrity.

Description

technical field [0001] The invention relates to the packaging field, in particular to a semiconductor packaging structure and a forming method thereof. Background technique [0002] Today, with the rapid development of information technology, the market prospect of integrated circuits is getting wider and wider. Correspondingly, the industries of integrated circuit design, chip manufacturing and integrated circuit packaging are all developing rapidly. In my country, the IC packaging industry has become an important economic growth point of the IC industry. In order to meet the needs of high-speed processing, multi-function, integration, miniaturization and low price of integrated circuit components, integrated circuit packaging technology also needs to be developed towards miniaturization and high density. Currently commonly used IC packaging technologies include Ball Grid Array (BGA), Chip-Scale Package (CSP) and Multi-Chip Module (MCM). In the packaging technology of int...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768H01L21/56H01L25/065H01L23/31H01L23/528
CPCH01L24/96H01L2224/12105H01L2224/19H01L2224/24137H01L21/768H01L21/56H01L23/31H01L23/538H01L25/065
Inventor 冯霞黄河刘煊杰张海芳
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More