Crystalline silicon growth device

Abstract

The invention discloses a crystalline silicon growth device. The crystalline silicon growth device comprises a fixed base, an outer insulation barrel, an inner insulation barrel, a centre shaft supporting rod, a heating electrode, a heater and a water cooling device, wherein a snap ring is arranged on an inner side of an upper end opening on the outer insulation barrel; the water cooling device is snapped on the snap ring; the inner insulation barrel is arranged inside the outer insulation barrel; a graphite felt layer is filled between the inner insulation barrel and the outer insulation barrel; an insulation layer is arranged inside the inner insulation barrel; a certain interval is reserved between the insulation layer and the inner insulation barrel; the heater is arranged inside the insulation layer; two fixed lugs are bilaterally and symmetrically arranged at the lowest edge positions on an inner side of the heater in such a way that a center line of the heater is taken as a baseline; electrode fixing holes are arranged on the fixed lugs; a heat conducting layer is arranged on the inner side of the heater; the heating electrodes are fixed on the electrode fixing holes which are arranged on the fixed lugs; the centre shaft supporting rod is arranged at a center position of the fixed base; a crucible holder is arranged at an upper end of the centre supporting rod and a crucible is arranged on the crucible holder. The crystalline silicon growth device has the advantages of simple structure, stable heat distribution and uniform heat flow.

Description

technical field [0001] The invention belongs to the field of inorganic material production, and in particular relates to a crystal silicon growth device. Background technique [0002] In the prior art, the modification of the crystalline silicon growth device involves a lot, mainly to ensure the uniform growth of the internal crystalline silicon and to grow a crystal form with better quality, which is a major factor that can greatly affect the quality of its growth. It is the control of the internal temperature. In the prior art, the temperature control accuracy inside the thermal field is mixed, and the rise and fall of the temperature are greatly affected by the environment, which leads to a more drastic change in the internal temperature, and the conditions required for the growth of crystalline silicon are also relatively large. It is harsh, so the more severe temperature changes can easily have an adverse effect on the overall growth of crystalline silicon. On the other...

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Problems solved by technology

[0002] In the prior art, the modification of the crystalline silicon growth device involves a lot, mainly to ensure the uniform growth of the internal crystalline silicon and to grow a crystal form with better quality, which is a major factor that can greatly affect the quality of its growth. It is the control of the internal temperature. In the prior art, the temperature control accuracy inside the thermal field is mixed, and the rise and fall of the temperature are greatly affected by the environment, which leads to a more drastic change in the internal temperature, and the conditions required for the growth of crystalline silicon are also relatively large. Harsh, so more severe temperature changes can easily have an adverse effect on the overall growth of crystalline silicon. On the other hand, after long-term research, the fixed base also has a greater impact on heat conduction, so the thermal resistance of the fixed base is also a direction that needs to be improved.

[0003] The heater in

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