Silicon-based GaN luminescent device based on crystalline silicon photovoltaic technology and preparation method of silicon-based GaN luminescent device

Abstract

The invention discloses a silicon-based GaN luminescent device based on a crystalline silicon photovoltaic technology. The silicon-based GaN luminescent device comprises a substrate for N-type or P-type silicon (100), a randomly distributed forward pyramid structure manufactured on the substrate, a buffering reflection layer which is manufactured on the surface of the forward pyramid structure and is made of high-temperature AlN or low-temperature AlN, a luminous layer which is manufactured on the buffering reflection layer, a transparent conductive oxide layer which is manufactured on the luminous layer, an upper electrode layer which is manufactured on the transparent conductive oxide layer and is in meshed distribution, and a lower electrode layer manufactured on the back surface of the substrate, wherein the surface of the luminous layer is parallel to the surface of the forward pyramid structure or parallel to the surface of the substrate; the surface of the transparent conductive oxide layer is a plane. According to the silicon-based GaN luminescent device, stress on an epitaxial material can be effectively released, so that high-quality luminous LED (light emitting diode) which is provided with epitaxial GaN and is low in manufacturing cost and high in efficiency can be obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor device preparation, in particular to a silicon-based GaN light-emitting device based on crystalline silicon photovoltaic technology and a preparation method. Background technique [0002] In recent years, the third-generation semiconductor materials and their optoelectronic functional devices represented by I-3 nitrides have shown an increasingly important leading role in important fields such as energy conservation and environmental protection, and are supporting the development of the next generation of strategic emerging industries. Key and basic. [0003] Group III nitride series materials have shown great advantages in the field of photoelectric devices for high-efficiency energy utilization in semiconductor lighting, but the large-scale application of high-efficiency group I nitride photoelectric devices has always faced low-cost substrate materials, substrate technology, and high-quality materi...

AI Technical Summary

Problems solved by technology

However, the quality of GaN single crystal films grown on Si substrates is far inferior to that of sapphire substrates. The main problem is that the thermal mismatch between Si and GaN is as high as 114%, which is much higher than that of sapphire (about -25.5%), which will lead to Huge tensile stress and cracking of the epitaxial film

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