A non-destructive testing method for the physical parameters of zno single crystals

Abstract

The non-destructive testing method for ZnO single crystal physical parameters disclosed in the present invention is mainly based on the dielectric relaxation effect of point defect weakly bound electron hopping conductance: the transport of weakly bound electrons at high frequencies is limited to the unit cell, mainly as Dielectric relaxation; the transport of weakly bound electrons at low frequencies can cross the depletion layer or even the entire grain, mainly manifested as a conductance process, and the dielectric relaxation effect will reach saturation at this time; according to the inflection point where the dielectric constant changes The corresponding frequency can calculate the geometric size of the depletion layer and the grain; the test process mainly uses the dielectric spectrum to characterize the thickness of the depletion layer and the grain size, and at the same time uses the modulus spectrum to analyze the low-frequency conductance and high-frequency relaxation information. Diagnose the diagnosis, and obtain the impedance parameters of each part of the inhomogeneity through impedance spectroscopy. The non-destructive detection method for ZnO single crystal physical parameters of the invention has the advantages of simple operation, non-destructive and small error.

Description

technical field [0001] The invention belongs to the technical field of electrical material detection, and relates to a non-destructive detection method for the physical size of a non-uniform semiconductor material or a semiconductor device with a shell-core structure, in particular to a non-destructive detection method for the physical parameters of a ZnO single crystal. Background technique [0002] The current popular measurement methods for geometric dimensions are difficult to measure the microscopic dimensions of heterogeneous material systems, and cannot simultaneously measure physical dimensions and physical parameters. Scanning electron microscopy (abbreviation: SEM) is the main method for measuring the geometric parameters of the microstructure, but it cannot realize the identification of the physical non-uniform region and the bulk, such as: it is difficult to distinguish the Schottky barrier region from the semiconductor matrix, so it is difficult to measure Schot...

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Problems solved by technology

In practice, it is found that the I-V characteristic method is difficult to obtain the physical size of the barrier; while the C-V characteristic method can not only obtain the barrier height, but also obtain the depletion layer width, but the C-V characteristic method is complicated to operate and needs to perform multiple experiments on the experimental data. Fitting, so the subjective deviation is relatively large, and the error of the test results is often much larger than that of the I-V characteristic method

[0004] The physical size and physical parameters of the homogeneous system can be directly measured, but the physical size and physical parameters of the heterogeneous system are often difficult to measure directly, especially it is difficult to simultaneously measure the physical size and physical parameters of the non-uniform microstructure

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