Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming shallow trench

A shallow trench and amorphous carbon technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, and circuits, can solve the problems of large differences in the depth of shallow trenches and lower yields, so as to alleviate the difference in etching amount and ensure The effect of yield

Active Publication Date: 2015-06-10
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the depth of the shallow grooves formed by the prior art varies greatly at different positions, which in turn leads to a decrease in yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming shallow trench
  • Method for forming shallow trench
  • Method for forming shallow trench

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In the existing process of forming shallow trench isolation to separate the active area, due to the slight asymmetry of the plasma distribution in the reaction chamber or the slight difference in the etching rate, the film layer at different positions of the wafer after the same process step The amount of etching will be different, and if the formation of shallow trenches requires a multi-step etching process, then after the accumulation of differences, the depth of the final formed shallow trenches will vary greatly at different positions, resulting in a decrease in yield.

[0034] In order to solve this problem, the present invention adjusts the horizontal angle of the wafer before each step of etching in the process of forming the shallow trench, so that the final adjusted angle is consistent with the maximum asymmetry, so as to alleviate the unevenness of the etching amount. The depth of the finally formed shallow trenches at different positions is consistent, which ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for forming a shallow trench, comprising the following steps: providing a semiconductor substrate, wherein N film layers are sequentially formed on the surface of the semiconductor substrate from bottom to top, and N is a positive integer; and sequentially etching the film layers step by step from top to bottom until a shallow trench is formed in the semiconductor substrate, wherein a wafer is horizontally rotated by a predetermined angle before each step of etching. According to the method of the invention, the wafer is constantly rotated by a certain angle before next step of etching to alleviate the difference between different positions in the amount of etching, so that the ultimately formed shallow trench has uniform depth in different positions, and the yield rate of semiconductor devices is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming shallow trenches. Background technique [0002] As the size of integrated circuits decreases, the devices that make up the circuits must be placed more densely to fit the limited space available on the chip. Since current research is devoted to increasing the density of active devices per unit area of ​​a semiconductor substrate, effective insulating isolation between circuits becomes more important. [0003] Shallow trench isolation (STI) technology has a number of process and electrical isolation advantages, including reducing the area occupied by the wafer surface while increasing the integration of devices, maintaining surface flatness and reducing channel width erosion. Therefore, at present, active region isolation layers of components such as MOS circuits are mostly manufactured by shallow trench isolation technology. The specific process step...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/762
CPCH01L21/76224
Inventor 张海洋王冬江
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com