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Through hole etching method

A technology of through-hole etching and etching layer, which is applied in the field of flat panel display device manufacturing, can solve the problems of over-etching of the etch stop layer, and achieve the effects of avoiding film layer damage, avoiding damage, and improving yield

Inactive Publication Date: 2015-06-10
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For this reason, the problem to be solved by the present invention one is the phenomenon that the existing through-hole etching process easily causes the over-etching of the etching stop layer;

Method used

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Embodiment 1

[0036] This embodiment provides a method for etching through holes, including the following steps:

[0037] S1, such as Figure 2a As shown, a photoresist layer 14 is coated on the surface of the substrate 100 to be etched, and a through-hole pattern is formed by a photolithography process. The substrate 100 is sequentially divided into a first etching layer 11, a second etching layer 11, and a first etching layer 11 along the thickness direction according to the depth of the through-hole. Two etching layers 12 and an etching stop layer 13 , the first etching layer 11 is disposed close to the photoresist layer 14 , and the thicknesses of the first etching layer 11 and the second etching layer 12 are equal to the depth of the through hole 7 .

[0038] The diameter of the through hole required in this embodiment is 3 μm, and the depth is 350 nm; the through hole etching method described in the present invention can etch through holes of any size, but in order to reflect the thro...

Embodiment 2

[0051] This embodiment provides a method for through hole etching, and the specific steps are the same as in Embodiment 1, such as Figure 5 As shown, the only difference is that the substrate 100 in this embodiment is a thin film transistor, and the thin film transistor includes a substrate 1, a buffer layer 2 directly disposed on the substrate 1, and semiconductor layers disposed on the buffer layer 2 in sequence. 3. The gate insulating layer 4, the gate layer 5 and the interlayer insulating layer 6. The via hole 7 to be prepared is provided through the gate insulating layer 4 and the interlayer insulating layer 6, and the connection source / The drain and the channel of the semiconductor layer 3.

[0052] In this embodiment, the buffer layer 2 is a silicon dioxide layer with a thickness of The semiconductor layer 3 is a polysilicon layer, The gate insulating layer 4 is an amorphous silicon dioxide layer, The gate 5 molybdenum-tungsten layer, The interlayer insulating...

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Abstract

The invention discloses a through hole etching method and belongs to the field of flat-panel display device manufacturing. The through hole etching method combines conventional physical dry etching with chemical dry etching and is realized in two steps; in the process of etching a through hole, a physical dry etching process is adopted, then chemical dry etching is performed for supplementary etching, so that over-etching which frequently occurs in physical dry etching can be avoided, quick etching and anisotropic etching can be realized by utilizing the physical dry etching process, and an oblique side wall is formed in the through hole; damage to a film layer is avoided effectively. In addition, a chemical dry etching process is performed after the step of physical dry etching, so that effective etching depth is guaranteed, and setting of over-etching depth is not needed in the process of physical dry etching, so that an etching stop layer is protected effectively, and damage to the film layer is avoided further.

Description

technical field [0001] The invention relates to the field of manufacturing flat panel display devices, in particular to a through hole etching method. Background technique [0002] With the rapid development of flat panel display technology, the density of devices and the complexity of the process are increasing, and strict control of the process becomes more important. Among them, the through hole plays an important role in the composition of the device structure as the interconnection between the multi-layer metal layers and the connection channel between the active area of ​​the device and the external circuit. [0003] In the prior art, a dry etching process is often used to etch the through holes. Dry etching includes physical dry etching and chemical dry etching. Physical dry etching is a process in which positive ions in the plasma are accelerated under the action of an electric field and vertically bombard the surface of the film to be etched for etching; physical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76877H01L2221/1068
Inventor 陈策李建文胡贤夫
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD