Contact hole forming method
A technology of contact holes and dielectric layers, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the electrical performance of the chip and the tungsten filling ability, so as to improve the filling ability, improve performance, and reduce device failure. Effect
Active Publication Date: 2015-06-24
SHANGHAI HUALI MICROELECTRONICS CORP
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This will seriously affect the filling ability of the subsequent tungsten, so that the tungsten will be preferentially closed at the top of the contact hole, and there are still gaps in the contact hole, such as image 3 As shown, this structure will seriously affect the electrical performance of the chip and is one of the main defects of chip failure.
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[0029] Please also see Figure 4A to Figure 4F , the method for forming the contact hole of the present embodiment includes the following steps:
[0030] Step 1, providing a substrate of a semiconductor device to be made into a contact hole, from Figure 4A It can be seen that the semiconductor device in this embodiment has three gates, a P well and an N well, and three contact holes need to be formed to contact the three gates.
[0031] Step 2, sequentially forming CESL layer 11, SiO 2 Layer 12, dielectric layer 13, APF layer 14, anti-reflection layer 15 and photoresist 16, such as Figure 4A shown. Wherein, the anti-reflection layer of the present embodiment includes a lower NF-DARC layer and an upper layer BARC layer, and the NF-DARC nitrogen-free dielectric anti-reflection layer is to cooperate with the APF layer as an anti-reflection layer and a hard mask when etching the APF, while the BARC bottom The anti-reflection layer is used in conjunction with photoresist. Wh...
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The invention discloses a contact hole forming method. A medium layer is added between a silicon dioxide layer and an APF layer, a round corner is formed after the top corner, on the top of a contact hole deep groove, of the medium layer is rounded through a corner rounding process after the contact hole deep groove is formed, the round corner is transferred to the top of the silicon dioxide layer after the medium layer is removed subsequently, and a contact hole which is finally formed comprises the round corner top. Thus, in the subsequent tungsten filling process, the top of the contact hole can not be sealed too early, the tungsten filling capacity is improved, and therefore the performance of devices is improved, and the possibility that the devices lose efficacy is lowered.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a contact hole. Background technique [0002] The semiconductor manufacturing process is rapidly entering the 22nm node era. Due to the reduction of critical dimensions, the contact holes formed in semiconductor devices are getting smaller and smaller, and the traditional metal aluminum can no longer be well deposited in the contact holes. Therefore, people use tungsten instead of aluminum to make metal interconnection lines, because Tungsten's gap filling (trench filling) ability is better. [0003] However, as the critical size of the contact hole becomes smaller and smaller, the tungsten filling process after the contact hole etching becomes more and more difficult. The main reason is that the top of the contact hole is easier to accumulate during the tungsten filling process. With thicker tungsten, as the critical size of the contact...
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IPC IPC(8): H01L21/768
CPCH01L21/768H01L21/76832H01L21/76877
Inventor 黄海黄君盖晨光
Owner SHANGHAI HUALI MICROELECTRONICS CORP