Method for continuously producing manganese nitride product
A manganese nitride and product technology, which is applied in the direction of nitrogen-metal/silicon/boron binary compounds, can solve the problems of uneven furnace temperature, no movement of materials, and high production costs, so as to reduce production costs, reduce investment costs, The effect of shortened production time
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0016] Embodiment 1, the steps are as follows:
[0017] 1) After crushing 1 ton of electrolytic manganese flakes to 40 mesh, add water glass at a ratio of 3 wt% to press into a Φ3cm spherical shape;
[0018] 2) Raise the temperature and pressure of the push plate kiln or tunnel kiln, the temperature range is 800°C, and always maintain a positive pressure of 100Pa, the temperature at the inlet end of the push plate kiln or tunnel kiln is high, and the temperature at the outlet end is low;
[0019] 3) Place the material obtained in step 1) in a pusher kiln or a tunnel kiln, and at the same time feed nitrogen or ammonia-nitrogen mixed gas into the pusher kiln or tunnel kiln. Pressure, access time 2h;
[0020] 4) Take the material from step 3) out of the kiln and cool it to 100°C under the protection of nitrogen. The obtained manganese nitride ball product has a nitrogen content of 7.5wt as measured by the National Nonferrous Metals and Electronic Materials Analysis and Testing C...
Embodiment 2
[0021] Embodiment 2, the steps are as follows:
[0022] 1) After crushing 1 ton of electrolytic manganese flakes to 120 mesh, add water glass at a ratio of 4wt% to press a spherical shape of Φ4cm;
[0023] 2) Raise the temperature and pressure of the push plate kiln or tunnel kiln, the temperature range is 900°C, and always maintain a positive pressure of 550Pa, the temperature at the inlet end of the push plate kiln or tunnel kiln is high, and the temperature at the outlet end is low;
[0024] 3) Place the material obtained in step 1) in a pusher kiln or a tunnel kiln, and at the same time feed nitrogen or ammonia-nitrogen mixed gas into the pusher kiln or tunnel kiln. Positive pressure, access time 5h;
[0025] 4) Take the material from step 3) out of the kiln, and cool it to 125°C under the protection of nitrogen. The obtained manganese nitride ball product has a nitrogen content of 7.2wt as measured by the National Nonferrous Metals and Electronic Materials Analysis and T...
Embodiment 3
[0026] Embodiment 3, the steps are as follows:
[0027] 1) After crushing 1 ton of electrolytic manganese flakes to 200 mesh, add water glass at a ratio of 5wt% to press a spherical shape of Φ5cm;
[0028] 2) Raise the temperature and pressure of the push plate kiln or tunnel kiln, the temperature range is 1000°C, and always maintain a positive pressure of 1000Pa, the temperature at the inlet end of the push plate kiln or tunnel kiln is high, and the temperature at the outlet end is low;
[0029] 3) Place the material prepared in step 1) in the pusher kiln or tunnel kiln, and at the same time, feed nitrogen or ammonia-nitrogen mixed gas into the pusher kiln or tunnel kiln. Pressure, access time 8h;
[0030] 4) Take the material from step 3) out of the kiln, and cool it to 150 °C under the protection of nitrogen. The obtained manganese nitride ball product has a nitrogen content of 7.3wt as measured by the National Nonferrous Metals and Electronic Materials Analysis and Testin...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com