Upper electrode structure and plasma reinforced chemical vapor deposition device

A technology of electrode structure and plasma, which is applied in the field of microelectronics, can solve problems such as equipment processing difficulties, and achieve the effects of optimizing air flow uniformity, improving air flow uniformity, and good uniformity

Active Publication Date: 2015-07-22
BEIJING JINGCHENG BOYANG OPTOELECTRONICS EQUIPCO
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  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in the existing methods of improving plasma uniformity and gas flow uniformity, there are problems in equipment processing, and once the equipment is processed, it is impossible to improve the film thickness and film properties in the process results by adjusting the equipment. Uniformity of

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  • Upper electrode structure and plasma reinforced chemical vapor deposition device

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Embodiment Construction

[0030] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0031] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0032] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ...", "above", etc., to describe the ...

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Abstract

The invention provides an upper electrode structure and a plasma reinforced chemical vapor deposition device. The upper electrode structure comprises a central electrode plate and a peripheral electrode plate surrounding the central electrode plate and connected to the central electrode plate, wherein the bottom surface of the peripheral electrode plate is lower than that of the central electrode plate, and a ventilation pore passage penetrating through the upper electrode structure is formed in the upper electrode structure. The bottom surface of the peripheral electrode plate is lower than the bottom surface of the central electrode plate, and the ventilation pore passage penetrating through the upper electrode structure is formed in the upper electrode structure, so that an arch structure is formed on the bottom surface of the upper electrode structure, the airflow uniformity of process gas passing by the upper electrode structure can be improved, and a film formed by utilizing the process vapor deposition is good in uniformity; moreover, the upper electrode structure comprises the central electrode plate and the peripheral electrode plate, which are connected with each other, so that the position relation between the central electrode plate and the peripheral electrode plate can be adjusted, and the airflow uniformity of the process gas can be further optimized.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an upper electrode structure and a plasma-enhanced chemical vapor deposition device. Background technique [0002] In the existing coating process, microelectronic plasma vacuum process equipment is widely used in the semiconductor industry and solar cell manufacturing process to deposit various thin films. Microelectronic plasma vacuum process equipment mainly includes CVD equipment, ETCH equipment and other related equipment in the field of microelectronics, such as CVD equipment and ETCH equipment for TFT liquid crystal display, or PECVD equipment for solar amorphous and microcrystalline. [0003] In the microelectronic plasma vacuum process equipment, the upper electrode is connected to the radio frequency power supply, the process gas is passed into the upper electrode, and the reaction gas is ionized under the action of the radio frequency power supply to generate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513
Inventor 南建辉王崧何嘉
Owner BEIJING JINGCHENG BOYANG OPTOELECTRONICS EQUIPCO
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