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Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor

A technology of thermistor and manufacturing method, applied in the thermistor, coating resistance material, metal material coating process, etc., can solve the problem of lack of heat resistance, unclear reliability of nitride-based materials, and inability to ensure resistance Heat resistance and other problems, to achieve the effect of high heat resistance

Inactive Publication Date: 2017-05-24
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of Ta-Al-N-based materials, but there is no description about heat resistance, and the reliability of nitride-based materials unclear
[0012] In addition, the Cr-N-M-based material of Patent Document 4 is a material with a small B constant of 500 or less, and if heat treatment is not performed at 200°C to 1000°C, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films

Method used

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  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor
  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor
  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor

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Embodiment

[0081] Next, regarding the metal nitride material for thermistors and its manufacturing method and thin-film thermistor sensor according to the present invention, refer to Figure 4 to Figure 15 , and specifically describe the results of evaluation based on the examples prepared according to the above-mentioned embodiment.

[0082]

[0083] As examples and comparative examples of the present invention, the following Figure 4 Element 121 is shown for film evaluation.

[0084] First, by reactive sputtering method, using Ti-Cr-Al composite targets with various composition ratios, on the Si wafer with thermal oxide film to be the Si substrate S, a 500nm-thick layer was formed as shown in Table 1 and Table 2. The thin film thermistor part 3 of the metal nitride material for the thermistor formed with various composition ratios shown. The sputtering condition at this time is the ultimate vacuum degree: 5×10 -6 Pa, sputtering pressure: 0.1~1Pa, target input power (output power)...

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Abstract

The present invention provides a metal nitride material for a thermistor, a method for producing the same, and a thin film type thermistor sensor, the metal nitride material for the thermistor can be directly formed on a thin film or the like under a non-sintering condition, and It has high heat resistance and high reliability. Metal nitride materials for thermistors, consisting of metal nitrides represented by the general formula: (Ti1‑vCrv)xAly(N1‑wOw)z, wherein 0.0<v<1.0, 0.70≤y / (x+ y)≤0.95, 0.45≤z≤0.55, 0<w≤0.35, x+y+z=1, and the crystal structure is a single phase of hexagonal wurtzite type.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are usually transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, these thermistor materials require firing at 600° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 3, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and B. 0.1≤x≤0.8, 0<y≤...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34G01K7/22H01C7/04
CPCG01K7/22C23C14/0641C23C14/0676H01C7/006H01C7/008H01C7/041H01C7/042C23C14/3414H01C17/12
Inventor 藤田利晃田中宽长友宪昭
Owner MITSUBISHI MATERIALS CORP