Feedstock gasification and supply device

Abstract

The present invention allows nearly all raw gas, whether from solid feedstock or liquid feedstock, to be stably supplied to a process chamber at high purity and at a desired concentration while controlling the flow rate with high precision, and to do so by making the gas into raw gas with a desired high temperature and high vapor pressure without causing thermal breakdown. Provided is a feedstock gasification and supply device, comprising a feedstock receiving tank, a gasifier for gasifying a liquid pressure fed from a liquid receiving tank, a flow rate control device for adjusting the flow rate of the raw gas from the gasifier, and a heating device for heating the gasifier, the high-temperature pressure-type flow rate control device, and desired sections of a flow path connected to the gasifier and the flow rate control device, wherein liquid-contacting parts or gas-contacting parts of metal surfaces of at least the feedstock receiving tank, the gasifier, the flow rate control device, the flow path that links these instruments and devices, or an opening-and-closing valve that is disposed in the flow path are subjected to Al2O3 passivation treatment, Cr2O3 passivation treatment, or FeF2 passivation treatment.

Description

technical field [0001] The present invention relates to an improvement of a material gasification supply device of a semiconductor manufacturing device using a so-called metalorganic chemical vapor deposition method (hereinafter referred to as MOCVD method), and relates to heating a solid or liquid or gaseous metalorganic material to a desired high temperature without generating Raw material gasification supply device capable of stably and continuously supplying high vapor pressure raw material vapor through thermal decomposition. Background technique [0002] Conventionally, as a raw material vaporization supply device of a semiconductor manufacturing apparatus using the MOCVD method, a bubble system vaporization supply device has been widely used. [0003] However, this bubbling method has many problems in the flow control of the supplied raw material gas, the concentration control of the raw material gas, and the vapor pressure of the raw material gas. A raw material gas...

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Problems solved by technology

[0030] The main object of the present invention is to solve the above-mentioned problems in the raw material gasification supply device such as Japanese Patent Application Laid-Open No. 2009-252760 and the problems related to the effect of the conventional passivation treatment, that is, because the metal material The thermal decomposition of the gas occurs at a temperature lower than the boiling point of the raw material, or the decomposition of the raw material gas due to contact with various metals or resin materials is unclear, so it is impossible to use all organic metal materials. Stable supply with high purity and high vapor pressure, and the effect of passivation treatment when the source gas becomes a high temperature exceeding 150°C has not been sufficiently analyzed, so the stability of the source gas against thermal decomposition is lacking, etc. The problem is to provide a product that has a simple structure, can achieve a reduction in manufacturing cost, and can continuously supply gasification and supply while controlling the flow rate of all the raw material gases of the organometallic raw material at a desired high vapor pressure and in a stable state with high precision. raw material gasification supply

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