Structure of IGBT chip
A chip, PN junction technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as rising costs and increasing difficulty in subsequent packaging, and achieve the effects of improving reliability, good switching speed, and reducing material consumption
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Embodiment 1
[0028] A structure of an IGBT chip, including an IGBT unit composed of a MOS field effect transistor and a triode, and also includes a control switch Q, an electrode N 2 + and an isolation cover, the IGBT unit is set inside the isolation cover, and the isolation cover is set on the electrode N 2 + Inside, the control switch Q is connected to the electrode N respectively. 2 + It is connected with the triode, when the IGBT unit conducts forwardly, the control switch Q is in the off state, and when the IGBT unit conducts in the reverse direction, the control switch Q is in the open state.
[0029] In this embodiment, when the IGBT unit is in the forward conducting state, the control switch Q is in the closed state, and the PN junction J 2 In reverse bias, J 1 in a forward biased state.
[0030] In this embodiment, when the IGBT unit is in reverse conduction, the control switch Q is in the open state, and the PN junction J 1 In the reverse bias state, the PN junction J 2 I...
Embodiment 2
[0039] The present invention is a gate-type high-speed IGBT structure, which introduces an isolation cover, N 2 + and device Q. When the IGBT is in the forward conduction, the PN junction J 2 In the reverse biased state, the PN junction J 1 In the forward-biased state, because of the isolation cover, it plays an isolation role, because there is enough thick insulating material in the isolation cover, for N 2 + There is no effect, so that the IGBT is the same as the traditional IGBT in the forward conduction state, and the direction of the current is as figure 2 So style. When the IGBT is in the reverse direction, J 1 In reverse bias state, J 2 In positive bias, electrons will flow out because of P + The influence of the potential barrier is hindered, and electrons have to overcome the potential barrier block Hard work will generate heat, the more the number of electrons, the greater the heat, which will affect the reliability of the device. Therefore, at present, th...
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