Metal-nitride thermistor material, manufacturing method therefor, and film-type thermistor sensor
A technology for thermistors and manufacturing methods, applied in thermistors, resistance manufacturing, coating resistance materials, etc., can solve problems such as unrealizable, lack of heat resistance, and inability to ensure heat resistance, etc., and achieve a good B constant , High heat resistance effect
Active Publication Date: 2015-08-12
MITSUBISHI MATERIALS CORP
View PDF7 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of the Ta-Al-N-based material, but there is no description about heat resistance, and the thermal stability of the nitride-based material is reliable. gender ambiguity
[0012] In addition, the Cr-N-M-based material of Patent Document 4 is a material with a small B constant of 500 or less, and if heat treatment is not performed at 200°C to 1000°C, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0079] Next, regarding the metal nitride material for thermistors, the method for producing the same, and the thin-film thermistor sensor according to the present invention, refer to Figure 4 to Figure 12 , and specifically describe the results of the evaluation by the examples prepared according to the above-mentioned embodiments.
[0080]
[0081] Examples and comparative examples of the present invention were prepared as follows Figure 4 The element 121 for film evaluation is shown.
[0082] First, various compositions shown in Table 1 were formed with a thickness of 500 nm on a Si wafer with a thermal oxide film serving as a Si substrate S using a reactive sputtering method using Cr-Al alloy targets of various composition ratios. Than formed the thin film thermistor portion 3 of the metal nitride material for thermistors. The sputtering conditions at this time are the ultimate vacuum degree: 5×10 -6 Pa, sputtering gas pressure: 0.1 to 1 Pa, target input power (outpu...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
Provided is a metal-nitride thermistor material that has a high heat tolerance, is highly reliable, and can be used to form a film or the like directly, without firing. Also provided are a method for manufacturing said metal-nitride thermistor material and a film-type thermistor sensor. This metal-nitride material for use in a thermistor comprises a metal nitride that can be represented by the general formula (CrxAlyNz) (with 0.70 ≤ y / (x+y) ≤ 0.95, 0.4 ≤ z ≤ 0.5, and x+y+z = 1), and said metal-nitride material has a single-phase wurtzite hexagonal crystal structure. The aforementioned method for manufacturing this metal-nitride thermistor material has a film-forming step in which a film is formed by reactive sputtering using a Cr-Al alloy sputtering target in a nitrogen-containing atmosphere.
Description
technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are usually transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, these thermistor materials require firing at 600° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 3, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and B. 0.1≤x≤0.8, 0<y≤...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/04C23C14/34H01C17/06H01C17/12
CPCH01C17/12H01C7/042H01C17/06513C23C14/0641C23C14/3414H01C7/008C23C14/0036C23C14/34G01K7/22
Inventor 藤田利晃田中宽长友宪昭
Owner MITSUBISHI MATERIALS CORP