Method for repairing damage on substrate in source/drain region

Abstract

The invention relates to the technical field of semiconductor manufacture, and particularly to a method for repairing damage on a substrate in a source / drain region. After a process which causes the damage to the source / drain region substrate, one time or multiple times of selective epitaxial growth process are performed on the substrate in the source / drain region, thereby growing a repairing film of which the material, the physical property, the chemical property and the like are totally same with that of the substrate on the surface of the damaged substrate, thereby finishing repair such as material structure loss compensation and substrate surface roughness reduction on the damage, thereby further improving the performance of a final prepared CMOS device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for repairing damage on a substrate in an active region. Background technique [0002] At present, with the miniaturization trend of semiconductor device structures, the size of CMOS device products is also continuously shrinking, and the substrate and material loss (the substrate and material loss) in the manufacturing process of device products is becoming more and more serious. [0003] According to the International Technology Roadmap For Semiconductors (ITRS), the surface roughness damage of CMOS device structure and the loss of silicon and oxide are becoming more and more serious. It is getting more and more serious. For example, during the preparation of CMOS products, the main-spacer etch / offset etch process steps will cause loss or damage to the silicon substrate. (Si substrate recess / damage). [0004] Specifically, the gate patterning (gat...

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Problems solved by technology

[0004] Specifically, the gate patterning (gate patterning) or gate patterning (gate patterning) or gate In the spacer process, even in the cleaning and ashing processes of the device surface, the etch stop layer covering the surface of the silicon substrate is relatively thin, which cannot stop the silicon The substrate is severely damaged (very grievous substrate damage) during the above process. If the above process is performed, the silicon located in the active area (that is, the source / drain area (source / drain, S / D for short)) will be damaged. Materials such as silicon and oxides on the surface of the substrate cause serious material loss, and will further increase the surface roughness of the silicon substrate

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