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Semiconductor laser equipment components

A technology of laser equipment and semiconductors, applied in semiconductor lasers, laser parts, semiconductor amplifier structures, etc., can solve problems such as energy efficiency is not necessarily high, and it is difficult for resonators to provide mechanical stability.

Active Publication Date: 2019-10-01
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, energy efficiency is not necessarily high
Additionally, large resonators are difficult to provide mechanical stability and require specialized knowledge for maintenance

Method used

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  • Semiconductor laser equipment components
  • Semiconductor laser equipment components
  • Semiconductor laser equipment components

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0070] 2. Embodiment 1 (semiconductor laser device assembly according to an embodiment of the present disclosure)

Embodiment approach 2

[0071] 3. Embodiment 2 (modification of Embodiment 1)

[0072] 4. Embodiment 3 (variation of Embodiments 1 and 2)

[0073] 5. Embodiment 4 (other modifications of Embodiments 1 and 2)

[0074] 6. Embodiment 5 (Modification of Embodiments 1 to 4)

[0075] 7. Embodiment 6 (modification of Embodiment 4)

[0076] 8. Embodiment 7 (other modification of Embodiment 4)

[0077] 9. Embodiment 8 (Description on Mode Synchronous Semiconductor Laser Element - Part 1)

[0078] 10. Embodiment 9 (Description on Mode Synchronous Semiconductor Laser Element - Part 2)

[0079] 11. Embodiment 10 (modification of Embodiment 7)

[0080] 12. Embodiment 11 (modification of Embodiment 10)

[0081] 13. Embodiment 12 (Modifications of Embodiments 7, 10, and 11)

[0082] 14. Embodiment 13 (Modifications of Embodiments 7, 10 to 12)

[0083] 15. Embodiment 14 (Modifications of Embodiments 7, 10 to 13)

[0084] [Summary Explanation Regarding Semiconductor Laser Device Components According to Embod...

Embodiment approach 3

[0245] Embodiment 3 is also an alternative embodiment of Embodiment 1. In Embodiment 1, the constant group velocity dispersion value (GVDconst) is 0 [(picosecond) 2 ]. On the other hand, in Embodiment 3, the constant group velocity dispersion value (GVDconst) is positive. Embodiment 3 is applicable to narrowing the pulse width.

[0246]In Embodiment 3, the constant group velocity dispersion value (GVDconst) is positive. The reason is that the carrier density changes due to gain saturation accompanying the oscillation of the semiconductor laser device and the refractive index of the compound semiconductor layer configuring the semiconductor laser device also changes. This is self-phase modulation (SPM) accompanied by gain saturation and is observed when the wavelength is shifted to the long wavelength side. As in Embodiment 1, since the wavelength shift is accompanied by a time delay, it is not enough to make the group velocity dispersion value on the long wavelength side z...

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PUM

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Abstract

Disclosed is a semiconductor laser device assembly comprising: a semiconductor laser device; and a dispersion compensation optical system where laser light emitted from the semiconductor laser device is incident and emitted to control the group velocity of each wavelength of the laser light emitted from the semiconductor laser device Dispersion value.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Japanese Priority Patent Application JP2014-028276 filed on February 18, 2014, the entire contents of which are hereby incorporated by reference. technical field [0003] The present disclosure relates to a semiconductor laser device assembly, and more particularly, to a semiconductor laser device assembly including a semiconductor laser device and a dispersion compensation optical system. Background technique [0004] Laser devices that generate pulsed laser light with a duration of picoseconds or femtoseconds are called ultrashort optical pulse laser devices. Hereinafter, "laser" means pulsed laser unless otherwise stated. In laser light generated from a laser device, light energy is concentrated in an extremely short time. Thus, lasers exhibit high sharp powers (peak powers) that cannot be provided by continuous-wave lasers. High peak power lasers exhibit nonlinear interacti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/06
CPCH01S3/08059H01S3/105H01S3/1118H01S5/06253H01S5/0657H01S5/1085H01S5/143H01S5/50H01S2301/08H01S5/22H01S5/34333H01S5/0057H01S5/309H01S5/0085H01S5/0078H01S5/14H01S3/08009H01S5/1025
Inventor 河野俊介仓本大宫岛孝夫幸田伦太郎渡边秀辉
Owner SONY CORP