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Extreme ultraviolet (EUV) multilayer-film carbon pollution experiment device

An experimental device, carbon pollution technology, applied in the direction of measuring devices, material analysis through optical means, instruments, etc., can solve the problems of pollution, singleness, low experimental reliability and contrast, and achieve the deepening of deposition mechanism and experimental reliability and high contrast effect

Inactive Publication Date: 2015-08-26
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to solve the technical problem that the EUV multilayer film carbon pollution experimental device in the prior art can only detect a single experimental result, and the reliability and contrast of the experiment are low, and provide an EUV multilayer film carbon pollution experimental device

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Embodiment Construction

[0034] The following combination Figure 1-7 The present invention is further described.

[0035] EUV multilayer film carbon pollution experimental device, including focusing chamber 1, first gate valve 2, transition vacuum chamber 3, angle valve 4, exposure vacuum chamber 5, optical filter 6, mass spectrometer 7, pollution gas flow control device 8 , the first vacuum pump 9, the three-dimensional adjustment mechanism 10, the sample holder fixing mechanism 11, the EUV photodiode 12, the preparation vacuum chamber 13, the second gate valve 14, the sample feeding mechanism 15, the sample holder 16, the sample delivery mechanism 17 and the first Two vacuum pumps 18.

[0036] Among them, the focusing chamber 1, the transitional vacuum chamber 3, and the exposure vacuum chamber 5 are sequentially arranged along the same optical axis from front to back along the propagation direction of the EUV light source. The transitional vacuum chamber 3 is composed of a cylindrical tube and a ...

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Abstract

The invention relates to an EUV multilayer-film carbon pollution experiment device, belongs to the technical field of semiconductors and solves the technical problems that EUV multilayer-film carbon pollution experiment devices can only detect single experiment results and are low in experiment reliability and comparability. The device comprises a focusing cavity, a first gate valve, a transition vacuum valve, an angle valve, an exposure vacuum cavity, a light filter, a mass spectrometer, a pollution gas flow control unit, a first vacuum pump, a three-dimensional adjusting mechanism, a sample support fixing mechanism, an EUV photodiode, a second gate valve, a preparation vacuum cavity, a sample feeding mechanism, a sample support, a sample delivery mechanism and a second vacuum pump. By means of the device, focusing exposure and out-of-focus exposure of samples and different-position difference exposure of samples can be completed, vacuum in the device cannot be destroyed, and the experiment reliability is high.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an EUV multilayer film carbon pollution experimental device. Background technique [0002] Extreme ultraviolet lithography (EUVL) is the mainstream lithography technology in the existing very large scale integrated circuit manufacturing process. The extreme ultraviolet lithography machine works in the soft X-ray band, and the photon energy is high, so it must work in a clean high-vacuum environment. If the vacuum degree of the photolithography system is low, serious carbon pollution will occur on the surface of the multilayer film in a short time, resulting in a rapid decrease in the reflectivity of the multilayer film. For example, if a mirror coated with a multilayer film is polluted, the reflection The efficiency is reduced from 68% to 67%. For the six-mirror projection and three-mirror lighting systems, the luminous flux from the light source to the silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/84
Inventor 龚学鹏卢启鹏彭忠琦王依
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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