A Method for Simulation and Analysis of Polarization of Photolithography Projection Objective Lens

A technology of simulation analysis and lithography projection, which is used in microlithography exposure equipment, photolithography process exposure devices, etc., to achieve the effects of reduced cost, low cost and convenient simulation conditions
CN104865799BInactive Publication Date: 2017-06-27INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Publication Date
2017-06-27
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The invention provides a polarization simulation analysis method of a lithography projection objective lens, which solves whether the degree of polarization of an input polarized beam in high NA lithography technology meets the index requirement of a lithography exposure system after being acted on by a lithography projection objective lens. The polarization simulation analysis method mainly includes four steps of setting simulation conditions, ray tracing, data processing, and result judgment. The data obtained through simulation analysis provides guidance and basis for film system design, material property selection, and lithography projection objective optical system design. The polarization analysis method is based on Fresnel reflection and transmission theory, ray tracing and CODEV software, and has the advantages of real-time, intuitive, simple operation, convenient modification of simulation conditions, and low cost.
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Description

technical field

[0001] The invention relates to a polarization simulation analysis method, in particular to a polarization simulation analysis in a lithography projection objective lens, and belongs to the technical field of lithography polarization. Background technique

[0002] Since the optical projection exposure technology was born in 1978, it has experienced several technological development stages such as g-line, i-line, 248nm, and 193nm. In just a few decades since its appearance, integrated circuits related to optical projection exposure technology have experienced several stages of development, such as small-scale, ultra-large-scale and extremely large-scale, strongly driven by the process of social informatization. Large-scale integrated circuits have become the cornerstone of the development of high-tech fields. From the aerospace fields such as satellites and rockets to the defense fields of radar and laser-guided missiles, as well as various fields of people's ...

Claims

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