Semiconductor device and method of operation thereof

Abstract

The invention discloses a semiconductor component and an operating method thereof. The semiconductor element includes a P-type substrate, a P-type first well region, an N-type second well region, a gate, an N-type source, an N-type drain, a dummy gate and an N-type first deep well region. The first well region is configured in the substrate. The second well region is disposed in the substrate adjacent to the first well region. The gate is disposed on the substrate and covers part of the first well region and part of the second well region. The source electrode is arranged in the first well region on one side of the gate electrode. The drain is disposed in the second well region on the other side of the gate. The dummy gate is disposed on the substrate between the gate and the drain. The first deep well region is disposed in the substrate and surrounds the first well region and the second well region.

Description

technical field [0001] The invention relates to an integrated circuit technology, in particular to a semiconductor element and its operating method. Background technique [0002] A laterally double-diffused metal oxide semiconductor (LDMOS) transistor is a power supply element widely used in semiconductor technology. LDMOS transistors offer high breakdown voltage (V bd ), and can have low on-resistance (on-resistance, R on ), therefore, it is commonly used as a high-voltage component in power management IC (power management IC). With the trend of highly analog and thin, light and small electronic products, the requirements for voltage accuracy, stability and component endurance are also increasing. [0003] However, as LDMOS transistors are shrinking, the distance between components is getting shorter and shorter, so gate-induced drain leakage (GIDL) often occurs, and noise from the substrate ( noise from the substrate) problem is becoming more and more serious. High GI...

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Problems solved by technology

[0003] However, as LDMOS transistors are shrinking, the distance between components is getting shorter and shorter, so gate-induced drain leakage (GIDL) often occurs, and noise from the substrate ( noise from the substrate) problem is becoming more and more serious

High GIDL current and high substrate noise can easily cause operation failure of LDMOS transistors, reducing device performance

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