Check patentability & draft patents in minutes with Patsnap Eureka AI!

Processing method for yttrium-doped zirconia monocrystalline substrate

A technology of yttrium-doped zirconia and a processing method, which is applied to the processing field of yttrium-doped zirconia single crystal substrates, can solve problems such as being unsuitable for growing oxide films, and achieve the effects of large application potential and good interface performance.

Inactive Publication Date: 2015-09-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for processing yttrium-doped zirconia single crystal substrates, which is used to solve the problem of untreated (111)-oriented flat substrates in the prior art. Bottom growth is not suitable for growing oxide films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing method for yttrium-doped zirconia monocrystalline substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] This embodiment provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising the following steps:

[0025] Step 1, providing a yttrium-doped zirconia single crystal substrate to be processed.

[0026] In this example, the yttrium-doped zirconia single crystal substrate to be processed is purchased from a commercial source, the yttrium-doped zirconia single crystal substrate to be processed has a cubic structure, and the surface to be treated is the (111) crystal plane . The yttrium-doped zirconia single crystal substrate is composed of zirconia and yttrium oxide, wherein the weight percentage of zirconia is 92%, and the weight percentage of yttrium oxide is 8%.

[0027] Step 2, treating the yttrium-doped zirconia single crystal substrate.

[0028] The yttrium-doped zirconia single crystal substrate to be treated was placed in a high-temperature furnace, and annealed in an air atmosphere at 1400 ° C for 2 hours to...

Embodiment 2

[0034] This embodiment provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising the following steps:

[0035] Step 1, providing a yttrium-doped zirconia single crystal substrate to be processed.

[0036] In this example, the yttrium-doped zirconia single crystal substrate to be processed is obtained by a solid-state sintering process, and the specific preparation process is as follows: first, weigh Y 2 o 3 and ZrO 2 powder raw material; then, adopt the mode of ball mill grinding to weigh Y 2 o 3 and ZrO 2 The powder raw materials are mixed; finally, the mixed powder raw materials are placed in a high-temperature furnace and sintered at a temperature of 1300° C. to obtain a yttrium-doped zirconia single crystal substrate material.

[0037] The prepared yttrium-doped zirconia single crystal substrate to be treated has a cubic structure, and the surface to be treated is a (111) crystal plane. The yttrium-doped zirc...

Embodiment 3

[0045] This embodiment provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising the following steps:

[0046] Step 1, providing a yttrium-doped zirconia single crystal substrate to be processed.

[0047] In this example, the yttrium-doped zirconia single crystal substrate to be processed is obtained by a solid-state sintering process, and the specific preparation process is as follows: first, weigh Y 2 o 3 and ZrO 2 powder raw material; then, the weighed Y 2 o 3 and ZrO 2 The powder raw materials are mixed; finally, the mixed powder raw materials are placed in a high-temperature furnace and sintered at a temperature of 1500° C. to obtain a yttrium-doped zirconia single crystal substrate material.

[0048] The prepared yttrium-doped zirconia single crystal substrate to be treated has a cubic structure, and the surface to be treated is a (111) crystal plane. The yttrium-doped zirconia single crystal substrate is c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a processing method for an yttrium-doped zirconia monocrystalline substrate. The processing method comprises: a to-be-processed yttrium-doped zirconia monocrystalline substrate is provided, the yttrium-doped zirconia monocrystalline substrate is arranged in a high temperature furnace, the air atmosphere annealing of the substrate is performed at 1350 DEG C to 1450 DEG C for 2-4 hours, and surface steps with the atomic scale are obtained, wherein the yttrium-doped zirconia monocrystalline substrate is a crystal face (111). According to the processing method, high-temperature annealing of the monocrystalline substrate of the crystal face (111) is performed, the inner parts of atoms are re-arranged according to the energy, the surfaces are re-crystallized, the steps with the atomic scale are obtained on the surface of the substrate, oxide films with good interface performance and matched with substrate crystal lattices can be grown, and the application potential is high.

Description

technical field [0001] The invention relates to the technical field of substrate materials, in particular to a processing method for a yttrium-doped zirconia single crystal substrate. Background technique [0002] With the maturity of semiconductor processing technology, the size of transistors in integrated circuits will reach a scale limited by quantum mechanical effects, and Moore's law in computer chip technology will soon expire. Transition metal oxides exhibit a variety of physical phenomena and have great potential for development. Compared with semiconductor materials, the lattice structure and characteristics of oxides are more complex, and the corresponding theoretical basis and material preparation technology cannot be compared with the development of semiconductor materials. But with the high temperature superconducting material YBa in 1986 2 Cu 3 o 7 People have gradually turned their attention to the preparation of high-quality thin film materials of perovs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L39/24
CPCH10N60/01
Inventor 姚岐沈大伟刘吉山李明颖刘正太
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com