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A kind of processing method of yttrium-doped zirconia single crystal substrate

A technology of yttrium-doped zirconia and a processing method, which is applied to the processing field of yttrium-doped zirconia single crystal substrates, can solve problems such as being unsuitable for growing oxide films, and achieve the effects of large application potential and good interface performance.

Inactive Publication Date: 2017-12-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for processing yttrium-doped zirconia single crystal substrates, which is used to solve the problem of untreated (111)-oriented flat substrates in the prior art. Bottom growth is not suitable for growing oxide films

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  • A kind of processing method of yttrium-doped zirconia single crystal substrate

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Embodiment 1

[0024] This embodiment provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising the following steps:

[0025] Step 1, providing a yttrium-doped zirconia single crystal substrate to be processed.

[0026] In this example, the yttrium-doped zirconia single crystal substrate to be processed is purchased from a commercial source, the yttrium-doped zirconia single crystal substrate to be processed has a cubic structure, and the surface to be treated is the (111) crystal plane . The yttrium-doped zirconia single crystal substrate is composed of zirconia and yttrium oxide, wherein the weight percentage of zirconia is 92%, and the weight percentage of yttrium oxide is 8%.

[0027] Step 2, treating the yttrium-doped zirconia single crystal substrate.

[0028] The yttrium-doped zirconia single crystal substrate to be treated was placed in a high-temperature furnace, and annealed in an air atmosphere at 1400 ° C for 2 hours to...

Embodiment 2

[0034] This embodiment provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising the following steps:

[0035] Step 1, providing a yttrium-doped zirconia single crystal substrate to be processed.

[0036] In this example, the yttrium-doped zirconia single crystal substrate to be processed is obtained by a solid-state sintering process, and the specific preparation process is as follows: first, weigh Y 2 o 3 and ZrO 2 powder raw material; then, adopt the mode of ball mill grinding to weigh Y 2 o 3 and ZrO 2 The powder raw materials are mixed; finally, the mixed powder raw materials are placed in a high-temperature furnace and sintered at a temperature of 1300° C. to obtain a yttrium-doped zirconia single crystal substrate material.

[0037] The prepared yttrium-doped zirconia single crystal substrate to be treated has a cubic structure, and the surface to be treated is a (111) crystal plane. The yttrium-doped zirc...

Embodiment 3

[0045] This embodiment provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising the following steps:

[0046] Step 1, providing a yttrium-doped zirconia single crystal substrate to be processed.

[0047] In this example, the yttrium-doped zirconia single crystal substrate to be processed is obtained by a solid-state sintering process, and the specific preparation process is as follows: first, weigh Y 2 o 3 and ZrO 2 powder raw material; then, the weighed Y 2 o 3 and ZrO 2 The powder raw materials are mixed; finally, the mixed powder raw materials are placed in a high-temperature furnace and sintered at a temperature of 1500° C. to obtain a yttrium-doped zirconia single crystal substrate material.

[0048] The prepared yttrium-doped zirconia single crystal substrate to be treated has a cubic structure, and the surface to be treated is a (111) crystal plane. The yttrium-doped zirconia single crystal substrate is c...

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Abstract

The invention provides a method for processing a yttrium-doped zirconia single crystal substrate, the processing method comprising: providing a yttrium-doped zirconia single crystal substrate to be processed, and placing the yttrium-doped zirconia single crystal substrate The bottom is placed in a high-temperature furnace, and air atmosphere annealing is performed at 1350°C-1450°C for 2-4 hours to obtain atomic-scale surface steps, wherein the yttrium-doped zirconia single crystal substrate is a (111) crystal plane. The treatment method of the present invention performs high-temperature annealing on the single crystal substrate of the (111) crystal plane, so that the interior of the atoms is rearranged according to energy, and the surface is recrystallized, thereby obtaining atomic-scale steps on the substrate surface. 111) Single crystal substrates are conducive to the growth of oxide films with good interfacial properties and lattice matching with the substrate, and have great application potential.

Description

technical field [0001] The invention relates to the technical field of substrate materials, in particular to a processing method for a yttrium-doped zirconia single crystal substrate. Background technique [0002] With the maturity of semiconductor processing technology, the size of transistors in integrated circuits will reach a scale limited by quantum mechanical effects, and Moore's law in computer chip technology will soon expire. Transition metal oxides exhibit a variety of physical phenomena and have great potential for development. Compared with semiconductor materials, the lattice structure and characteristics of oxides are more complex, and the corresponding theoretical basis and material preparation technology cannot be compared with the development of semiconductor materials. But with the high temperature superconducting material YBa in 1986 2 Cu 3 o 7 People have gradually turned their attention to the preparation of high-quality thin film materials of perovs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L39/24H10N60/01
CPCH10N60/01
Inventor 姚岐沈大伟刘吉山李明颖刘正太
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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