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Plasma processing method

A plasma and processing device technology, applied in the field of plasma processing, can solve problems such as poor results and poor plasma stability, and achieve the effects of preventing instability, ensuring continuous ignition, and avoiding violent fluctuations in output frequency

Active Publication Date: 2015-09-09
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology

[0005] However, in the existing plasma treatment process, the stability of the plasma is poor, and it is easy to cause poor plasma treatment results.

Method used

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Embodiment Construction

[0030] As mentioned in the background, in the existing plasma treatment process, the stability of the plasma is relatively poor, which easily leads to poor results of the plasma treatment.

[0031] Please continue to refer figure 1 , in the existing plasma processing device, the power supply 13 provides radio frequency power to the inductively coupled coil 12 arranged on the top of the reaction chamber 10 through the matching unit 15, and the inductively coupled coil 12 causes plasma to be generated in the reaction chamber 10, so The plasma in the reaction chamber 10 is the load of the power supply 13 .

[0032]With the progress of the plasma treatment process, it is often necessary to perform multiple continuous process steps. For two adjacent process steps, the frequency of the pulse signal output by the power supply 13 needs to change, and the gas composition in the reaction chamber 10, The gas pressure will also change with the change of the process, thus causing the impe...

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Abstract

The invention provides a plasma processing method. The plasma processing method comprises that a first frequency is obtained in advance, and the first frequency is the output frequency of a frequency-variable power source when the frequency-variable power source matches the impedance of a reaction chamber in the first plasma processing process; a second frequency is obtained in advance, and the second frequency is the output frequency of the frequency-variable power source when the frequency-variable power source matches the impedance of the reaction chamber in the second plasma processing process; first plasma processing is carried out on a substrate to be processed, and at the same time, an external control unit sets the output frequency of the frequency-variable power source as the first frequency so that the frequency-variable power source matches the impedance of the reaction chamber; and second plasma processing is carried out on the substrate to be processed, and at the same time, the external control unit sets the output frequency of the frequency-variable power source as the second frequency so that the frequency-variable power source matches the impedance of the reaction chamber. The plasma processing method can keep plasma stable and avoid plasma from quenching.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a plasma treatment method. Background technique [0002] Plasma treatment processes used in the manufacture of integrated circuits include plasma deposition processes, plasma etching processes, and the like. The principle of the plasma treatment process includes: using a radio frequency power source to drive a plasma generating device (such as an inductively coupled coil) to generate a strong high frequency alternating magnetic field, so that a low pressure reaction gas is ionized to generate plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, which can undergo various physical and chemical reactions with the surface of the wafer to be processed, making the morphology of the wafer surface changes occur, ie the plasma treatment process is complete. In addition, the active ions...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67
Inventor 叶如彬
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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