A Method to Suppress Device NBTI Degradation by Changing Channel Doping Concentration
A technology of channel doping and doping concentration, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of unreliability of deep submicron pMOS devices, and achieve a significant suppression effect
Active Publication Date: 2017-12-01
SHENZHEN UNIV
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[0007] Aiming at the defects of the prior art, the purpose of the present invention is to provide a method for suppressing the NBTI degradation of the device by changing the channel doping concentration, aiming at solving the serious unreliability of the deep submicron pMOS device due to the NBTI effect in the prior art question
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[0027] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
[0028] In the embodiment of the present invention, the degradation of the NBTI of the device mainly depends on the magnitude of the electric field in the gate oxide layer, and the difference of the channel doping concentration will obviously cause the change of the electric field of the gate oxide layer, thereby causing the difference in the degradation of the NBTI. However, the change of the channel doping concentration will cause the threshold voltage of the device to change, making the problem of NBTI degradation with the change of the channel doping concentration more complicated. In the ...
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The invention discloses a method for inhibiting NBTI (Negative Bias Temperature Instability) degradation of a pMOS (p-type Metal Oxide Semiconductor) device by changing channel doping concentration. The method comprises the steps of (1) acquiring a flat-band voltage VFB of the device according to a work function difference Vms; acquiring a change relationship between different flat-band voltages and doping concentrations Nd by selecting metal gate materials of different work functions; (2) acquiring a change relationship between the threshold voltage Vth of the device and the channel doping concentrations Nd under different flat-band voltages according to the flat-band voltage VFB; (3) when the threshold voltage of the device is 1 / 4-1 / 5 of the working voltage, acquiring the doping concentrations Nd of the device at different flat-band voltages; (4) acquiring the NBTI degradation degrees of the device at different flat-band voltages, different doping concentrations and the same threshold voltage; and (5) judging whether the NBTI degradation degrees of the device meet the actual requirement, if so, inhibiting the NBTI degradation of the device; otherwise, selecting metal gate materials of different work functions and returning to step (1). The NBTI degradation of the device is inhibited by changing the changing channel doping concentration, so the method has a significant inhibiting effect.
Description
Technical field [0001] The invention belongs to the field of semiconductor devices, and more specifically, relates to a method for suppressing the degradation of NBTI (Negative Bias Temperature Instability) of a pMOS device by changing the channel doping concentration. Background technique [0002] From the development law of integrated circuits themselves, high performance and high reliability have always been the two commanding heights of their development. On the one hand, the development of integrated circuits is moving towards larger-scale integration, which improves the performance of devices and circuits, and reduces the production cost of unit circuits. This is the driving force for the development of integrated circuit technology; on the other hand, reliability problems are always accompanied by With the development and application of integrated circuit technology, and with the further reduction of the feature size of integrated circuits, reliability problems have become...
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IPC IPC(8): H01L21/8238H01L21/225
CPCH01L21/2257H01L21/823807
Inventor 曹建民孙瑞泽
Owner SHENZHEN UNIV