[0042] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.
[0043] The technical problem to be solved by the present invention is: when preparing the fully embedded touch display device in the prior art, the formation of the via hole 1 used to connect the touch electrode and the common electrode, and the via hole 1 used to connect the pixel electrode and the thin film The formation of via hole 2, via hole 3 and via hole 4 of the metal layer of the data line of the transistor requires two photolithography processes. Therefore, the manufacturing process of the fully in-cell touch display device in the prior art is complicated, the process error is large, and the production cycle is long. In order to solve the above technical problems, an embodiment of the present invention provides a touch display device.
[0044] like figure 1 As shown, is a schematic structural diagram of a touch display device according to an embodiment of the present invention. The touch display device of this embodiment mainly includes a thin film transistor, a planarization layer 9 (Planarization, PLN), a common electrode 10, an interface layer 11 (Interface Layer, IL), a touch electrode 12, and a protective layer 13 (Protective Layer, PV ), connecting the electrode 15 and the pixel electrode 14.
[0045] Specifically, the flat layer 9 is formed on the thin film transistor. The common electrode 10 is formed on the planar layer 9, and a first via hole 1' is opened on the planar layer 9. The interface layer 11 is formed on the common electrode 10, and a second via hole 2' and a third via hole 3' are opened on the interface layer 11, and the third via hole 3' communicates with the first via hole 1'. The touch electrodes 12 are formed on the interface layer 11 . The protective layer 13 is formed on the touch electrodes 12 and the interface layer 11, and the fourth via hole 4' and the fifth via hole 5' are opened on the protective layer 13. The fourth via hole 4' communicates with the second via hole 2', and the fifth via hole 5' communicates with the third via hole 3'.
[0046]The first via hole 1', the second via hole 2', the third via hole 3', the fourth via hole 4' and the fifth via hole 5' are formed by the same photolithography process. The connection electrode 15 and the pixel electrode 14 are formed on the protective layer 13 . The connection electrode 15 is connected to the touch electrode 12 through the fourth via hole 4', and connected to the common electrode 10 through the second via hole 2'. That is, the touch electrode 12 and the common electrode 10 are electrically connected by the connecting electrode 15 through the fourth via hole 4' and the second via hole 2'. In addition, the pixel electrode 14 is connected to the data line metal layer 8 of the thin film transistor through the fifth via hole 5', the third via hole 3' and the first via hole 1' in sequence. That is, the pixel electrode 14 is connected to the data line metal layer 8 of the thin film transistor through the fifth via hole 5', the third via hole 3' and the first via hole 1' connected in sequence.
[0047] figure 2 A schematic structural diagram of the photomask 16 required for forming via holes in the embodiment of the present invention is shown. refer to figure 2 , the mask 16 is divided into five areas, the five areas are the first area 161 , the second area 162 , the third area 163 , the fourth area 164 and the fifth area 165 from left to right. The first area 161 , the third area 163 and the fifth area 165 are opaque areas with a light transmittance of 0, and the second area 162 and the fourth area 164 are light transmittance areas with a light transmittance of 100%.
[0048] As mentioned above, five vias are formed through the same photolithography process. Combine below Figure 3a to Figure 3d The photolithography process for forming these five via holes at one time is described in detail. The photolithography process specifically includes: firstly, an interface layer 11, a touch electrode 12 and a protective layer 13 are sequentially formed on the common electrode 10, and then a photoresist 17 is coated on the protective layer 13, thereby forming such as Figure 3a structure shown. Second, using the figure 2 The shown photomask 16 exposes and develops the photoresist 17 to form a first unexposed photoresist topography 171, a second unexposed photoresist topography 173 and a third unexposed photoresist topography 175, The first fully exposed area 172 and the second fully exposed area 174, thereby forming Figure 3b structure shown. Third, the protective layer 13 and the interface layer 11 corresponding to the first fully exposed region 172 are etched away by an etching process. In the actual implementation process, the amount of etching solution and the etching time are set according to the depth of etching to form the second Four vias 4' and a second via 2'. At the same time, the protective layer 13, the interface layer 11 and the flat layer 9 corresponding to the second fully exposed region 174 are etched away by an etching process. In the actual implementation process, the amount of etching solution and the etching time are set according to the depth of etching. Form the fifth via hole 5', the third via hole 3' and the first via hole 1', thereby forming Figure 3c structure shown. Fourth, remove the remaining photoresist 17 through an ashing process, thereby forming Figure 3d structure shown. After five via holes are formed by the above-mentioned photolithography process, a connection electrode 15 and a pixel electrode 14 insulated from each other are formed on the protective layer 13, so as to form Figure 3e structure shown. In this way, the connection electrode 15 is connected to the touch electrode 12 through the fourth via hole 4', and then connected to the common electrode 10 through the second via hole 2'. That is to say, the touch electrode 12 and the common electrode 10 are electrically connected together by the connecting electrode 15 , so that the common electrode 10 transmits the common voltage signal to the touch electrode 12 through the connecting electrode 15 . In addition, the pixel electrode 14 is sequentially connected to the data line metal layer 8 of the thin film transistor through the fifth via hole 5', the third via hole 3' and the first via hole 1', so that the data line metal layer 8 transmits the data signal to the pixel. electrode 14.
[0049] Applying the touch display device described in this embodiment, five via holes (the first via hole 1' on the flat layer 9, the second via hole 2' on the interface layer 11, and the third via hole) are formed by using the same photolithography process. via hole 3', and the fourth via hole 4' and the fifth via hole 5' on the protective layer 13), so that the connection electrode 15 first connects to the touch electrode 12 through the fourth via hole 4', and then passes through the second via hole 2' is connected to the common electrode 10, and at the same time, the pixel electrode 14 is connected to the data line metal layer 8 of the thin film transistor through the fifth via hole 5', the third via hole 3' and the first via hole 1' in sequence. Compared with the prior art, when preparing the touch display device of this embodiment, the formation of the fourth via hole 4' and the second via hole 2' for connecting the connecting electrode 15 to the touch electrode 12 and the common electrode 10, And the formation of the fifth via hole 5 ′, the third via hole 3 ′ and the first via hole 1 ′ for connecting the pixel electrode 14 and the data line metal layer 8 of the TFT only needs one photolithography process. Therefore, the manufacturing process of the touch display device of the present invention is simple, the process error is small, the production cycle is short, and the production cost is low; the improvement of the structure of the touch display device brings about a significant increase in product production efficiency.
[0050] In a preferred embodiment of the present invention, the connection electrode 15 and the pixel electrode 14 are arranged in the same layer. Specifically, the method for forming the connection electrode 15 and the pixel electrode 14 arranged in the same layer is as follows: firstly, a layer of conductive electrode material and a layer of photoresist are sequentially deposited on the protection layer 13 . Secondly, the photoresist is exposed and developed to remove the photoresist corresponding to the area between the connection electrode 15 and the pixel electrode 14 to be formed. Thirdly, an etching process is used to remove the conductive electrode material exposed outside the photoresist. Fourth, use an ashing process to remove the remaining photoresist, so as to form the connection electrode 15 and the pixel electrode 14 that are not connected to each other and are arranged on the same layer.
[0051] In this embodiment, the connection electrode 15 and the pixel electrode 14 arranged on the same layer are formed by the same photolithography operation, which is beneficial to further simplify the manufacturing process of the touch display device and further improve the production efficiency.
[0052] In a preferred embodiment of the present invention, refer to figure 1 , the touch display device further includes a substrate 1 on which the thin film transistor is located. In particular, the thin film transistor is preferably a low temperature polysilicon thin film transistor. The thin film transistor specifically includes an N-type metal oxide semiconductor, a gate insulating layer 5 , a scanning line metal layer 6 , an interlayer insulating layer 7 and a data line metal layer 8 . Wherein, the N-type metal oxide semiconductor is located on the substrate 1 . The gate insulating layer 5 is located on the NMOS. The scan line metal layer 6 is located on the gate insulating layer 5 . The interlayer insulating layer 7 is located on the scan line metal layer 6 . The data line metal layer 8 is located on the interlayer insulating layer 7 .
[0053] Specifically, the substrate 1 may be glass. An amorphous silicon layer 2 and a barrier layer 3 for covering the amorphous silicon layer 2 are sequentially formed on the substrate 1 . The N-channel layer 4 of NMOS is located on the barrier layer 3 . The two outer ends of the N-channel layer 4 respectively have an N+ type layer 41 and an N− type layer 42 . The N+ type layer 41 is located at the outermost end of the N channel layer 4 , and the N − type layer 42 is adjacent to the N+ type layer 41 . Inside the N-channel layer 4 is the polysilicon layer 43 (Poly) of the N-channel layer 4 . The scan line metal layer 6 is located on the gate insulation layer 5 (Gate Insulation Layer, GI), and is used for insulation from the N channel layer 4 . An inter-level dielectric layer 7 (Inter-Level Dielectric, ILD) is located on the scan line metal layer 6 and the gate insulating layer 5 . The scan line metal layer 6 is connected to the N+ type layer 41 by passing through the through hole opened on the interlayer insulating layer 7 and the through hole opened on the gate insulating layer 5 . The flat layer 9 is located on the data line metal layer 8 .
[0054] The embodiment of the present invention also provides an electronic device with a simple manufacturing process. The electronic device includes the touch display device described in the above embodiments. In particular, the electronic device may be: liquid crystal display panel, electronic paper, liquid crystal TV, liquid crystal display, digital photo frame, mobile phone, tablet computer and other products or components with any touch display function.
[0055] The embodiment of the present invention also provides a method for preparing the above-mentioned touch display device. like Figure 4 Shown is a schematic flow chart of the method for manufacturing a touch display device in this embodiment. The preparation method involved in this embodiment mainly includes the following steps:
[0056] Step 101: providing a thin film transistor.
[0057] Step 102: Forming a flat layer 9, a common electrode 10, an interface layer 11, a touch electrode 12 and a protective layer 13 on the thin film transistor in sequence.
[0058] Step 103: Using the same photolithography process, form a first via hole 1' on the planar layer 9, and form a second via hole 2' and a third via hole connected to the first via hole 1' on the interface layer 11 3', and a fourth via hole 4' communicating with the second via hole 2' and a fifth via hole 5' communicating with the third via hole 3' are formed on the protection layer 13.
[0059] Step 104: Form the connection electrode 15 and the pixel electrode 14 on the protection layer 13, so that the connection electrode 15 is connected to the touch electrode 12 through the second via hole 2', and connected to the common electrode 10 through the first via hole 1'; and make the pixel The electrode 14 is electrically connected to the data line metal layer 8 of the thin film transistor through the fifth via hole 5 ′, the third via hole 3 ′ and the first via hole 1 ′ in sequence.
[0060] In this embodiment, the connection electrode 15 and the pixel electrode 14 are formed on the protection layer 13 , and the connection electrode 15 and the pixel electrode 14 are arranged in the same layer.
[0061] In this embodiment, the above-mentioned method for manufacturing a touch display device further includes: first, providing a substrate 1 . Second, thin film transistors on substrate 1. The thin film transistor is preferably a low temperature polysilicon thin film transistor.
[0062] like Figure 5 Shown is a schematic flowchart of a method for forming a thin film transistor on a substrate in an embodiment of the present invention. The method for forming a thin film transistor on a substrate 1 described in this embodiment mainly includes the following steps:
[0063] Step 201 : forming an N-type metal oxide semiconductor on a substrate 1 .
[0064] Step 202: forming a gate insulating layer 5 on the NMOS.
[0065] Step 203 : forming a scan line metal layer 6 on the gate insulating layer 5 .
[0066] Step 204 : forming an interlayer insulating layer 7 on the scan line metal layer 6 .
[0067] Step 205 : forming a data line metal layer 8 on the interlayer insulating layer 7 .
[0068] For detailed details of the above steps, please refer to the above combination Figures 1 to 3e The description of the touch display device of the present invention will not be described in detail here.
[0069] It can be seen that by applying the method for manufacturing a touch display device described in this embodiment, five via holes (the first via hole 1' on the flat layer 9, the second via hole on the interface layer 11) are formed by using the same photolithography process. 2' and the third via hole 3', and the fourth via hole 4' and the fifth via hole 5' on the protective layer 13), so that the connection electrode 15 is first connected to the touch electrode 12 through the fourth via hole 4' , and then connect the common electrode 10 through the second via hole 2', and at the same time make the pixel electrode 14 connect to the data line metal layer 8 of the thin film transistor through the fifth via hole 5', the third via hole 3' and the first via hole 1' in sequence . Compared with the prior art, when using the method described in this embodiment to prepare a touch display device, the fourth via hole 4' and the second via hole 2' used to connect the connecting electrode 15 to the touch electrode 12 and the common electrode 10 The formation of the fifth via hole 5', the third via hole 3' and the first via hole 1' for connecting the pixel electrode 14 and the data line metal layer 8 of the thin film transistor only need one photolithography process. Finish. Therefore, the preparation method described in this embodiment has simple process, small process error, and short production cycle, which improves the production efficiency of the touch display device and reduces the production cost.
[0070] Although the embodiments disclosed in the present invention are as above, the described content is only an embodiment adopted for the convenience of understanding the present invention, and is not intended to limit the present invention. Any person skilled in the technical field to which the present invention belongs can make any modification and change in the implementation form and details without departing from the spirit and scope disclosed in the present invention, but the protection scope of the present invention remains within the scope of the present invention. The scope defined by the appended claims shall prevail.
