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Method for preparing FeSeTe film by pulse laser deposition coating technology

A pulsed laser deposition, iron-selenium technology, applied in the field of high-temperature superconducting thin films, can solve the problems of easy introduction of impurities and unfavorable film growth, and achieve the effect of overcoming the introduction of impurities, easy composition, and good crystal structure

Inactive Publication Date: 2015-09-23
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, methods for preparing FeSeTe thin films include magnetron sputtering and other methods, but using magnetron sputtering to grow FeSeTe thin films, due to the relatively high pressure in the growth chamber, impurities are easily introduced, which is not conducive to the growth of the film.

Method used

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  • Method for preparing FeSeTe film by pulse laser deposition coating technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1. FeSe 0.5 Te 0.5 Target preparation:

[0022] a) Fe, Se, Te powders are mixed and ground evenly in a molar ratio of 1:0.5:0.5;

[0023] b) The ground powder is sintered in a vacuum quartz tube at 700°C for 24 hours, and quenched at 400°C;

[0024] c) The sintered iron selenium tellurium is ground into powder again, and then pressed into a target with a diameter of 1 inch and a thickness of 2 mm;

[0025] d) The suppressed FeSe 0.5 Te 0.5 Sinter at 700°C for 24 hours in a vacuum quartz tube, and quench at 400°C.

[0026] 2. Pulsed laser deposition on SrTiO 3 FeSe grown on the substrate 0.5 Te 0.5 The thin film method is as follows:

[0027] a) SrTiO 3 Substrate and FeSe 0.5 Te 0.5 The target is put into the growth chamber, and the vacuum is evacuated to 10 -8 mbar, heat the substrate to 310°C through the heating wire in the substrate holder, wait until the temperature stabilizes, and the air pressure reaches 10 -7 about mbar;

[0028] b) Adjust laser par...

Embodiment 2

[0033] 1. FeSe 0.7 Te 0.3 Target preparation:

[0034] a) Fe, Se, Te powders are mixed and ground evenly in a molar ratio of 1:0.7:0.3;

[0035] b) The ground powder is sintered in a vacuum quartz tube at 700°C for 24 hours, and quenched at 400°C;

[0036] c) The sintered iron selenium tellurium is ground into powder again, and then pressed into a target with a diameter of 1 inch and a thickness of 2 mm;

[0037] d) The pressed material is sintered in a vacuum quartz tube at 700°C for 24 hours, and quenched at 400°C.

[0038] 2. Pulsed laser deposition on LaAlO 3 FeSe grown on the substrate 0.7 Te 0.3 The thin film method is as follows:

[0039] a) LaAlO 3 Substrate and FeSe 0.7 Te 0.3 The target is put into the growth chamber, and the vacuum is evacuated to 10 -8 mbar, heat the substrate to 310°C through the heating wire in the substrate holder, wait until the temperature stabilizes, and the air pressure reaches 10 -7 about mbar;

[0040] b) Adjust laser paramete...

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Abstract

The invention belongs to the field of novel Fe-based superconductors and particularly relates to a method for preparing a FeSeTe film by a pulse laser deposition coating technology. The method comprises the following steps: firstly, uniformly mixing and grinding Fe powder, Se powder and Te powder at a certain molar ratio; secondly, sintering the ground powder in a vacuum quartz tube at 700DEG C for 24 hours, performing quenching treatment when the sintered powder is at 400DEG C, grinding the sintered powder into powder again, pressing the powder in the size of a required target material, sintering the powder in the vacuum quartz tube at 700DEG C for 24 hours, and performing quenching treatment when the powder is at 400DEG C; adjusting laser parameters, performing pretreatment of the obtained target material, and performing film growth on a substrate within a certain time; and performing natural cooling in vacuum to obtain the required film. According to the method, the FeSeTe superconductive film is grown by utilizing the pulse laser deposition coating technology. The method has the advantages that the use is convenient, the coating speed is high, films of different components can be prepared, and the target material and the substrate are kept consistent in component more easily.

Description

technical field [0001] The invention belongs to the field of novel iron-based superconductors, and in particular relates to the technology of preparing a novel iron-based superconductor iron-selenium-tellurium high-temperature superconducting thin film by using pulsed laser deposition coating technology. Background technique [0002] At the beginning of the 20th century, the phenomenon of superconductivity was accidentally discovered by the Dutch physicist H. Camerin Onnes in the laboratory. Then people began to study various types of superconductors, and devoted themselves to continuously increasing the superconducting temperature so that it can be applied in human life. The characteristics of zero resistance and complete diamagnetism of superconductors have made great contributions to the development of electric power, transportation and other industries. Previously, people's research on high-temperature superconductors focused more on copper oxides. With the deepening of...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/14
Inventor 汤怡陈石宏邢钟文
Owner NANJING UNIV
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