Rare Earth Ion Activated Complex Phase Fluorescent Materials
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HANGZHOU YINGHE PHOTOELECTRONICS MATERIALS
- Publication Date
- 2017-04-12
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Abstract
Description
technical field
[0001] The invention relates to a composite fluorescent material, in particular to a fluorescent material for white light system and multicolor light emitting devices including semiconductor light emitting elements (LED). Background technique
[0002] With the breakthrough of the third-generation semiconductor material gallium nitride and the advent of blue, green, and white light-emitting diodes, LED (semiconductor light-emitting diode, Light-Emitting Diode), known as "the technology that illuminates the future", has gradually entered the market. our daily lives and will lead us to a brighter future. Using the third-generation semiconductor material gallium nitride as the semiconductor lighting source, the power consumption is only 1 / 10 of that of ordinary incandescent lamps at the same brightness, and the life span can reach 100,000 hours. A semiconductor lamp can be used for more than 50 years under normal conditions. As a new lighting technology, LED wil...