Forming method of semiconductor structure

Abstract

A forming method of a semiconductor structure includes providing a semiconductor substrate on which a plurality of floating gate structures and control gate medium layers arranged on the top surfaces of the floating gate structures are formed; forming a first graphic control gate material layer having continuous images on the semiconductor substrate, wherein the first graphic control gate material layer covers a part of floating gate medium layers on the floating gate structures; forming a mask layer on the semiconductor substrate, wherein a part of the first graphic control gate material layer on the floating structures and the semiconductor substrate disposed on two sides of the part of the first graphic control gate material layer are exposed from the mask layer; removing the first graphic control gate material layer that is not covered by the mask layer by taking the mask layer as a mask and forming control gates separated from one another; removing the mask layer; and forming side walls on surfaces of side walls of the floating structures, the control gate medium layers and the control gates. By adopting the method, reliability of a flash memory can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor structure. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: logic, memory and analog circuits, among which storage devices account for a considerable proportion of integrated circuit products, such as RAM (random access memory), DRAM (dynamic Random access memory), ROM (read-only memory), EPROM (erasable programmable read-only memory), FLASH (flash memory) and FRAM (ferroelectric memory), etc. The development of flash memory devices in memory is particularly rapid. Its main feature is that it can keep the stored information for a long time without power on. It has many advantages such as high integration, fast access speed and easy erasure, so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applic...

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Problems solved by technology

[0004] The flash memory formed by the existing technology often has problems such as short circuits, and the reliability of the flash memory needs to be further improved

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