Cu/graphene delamination method based on femtosecond laser technology

A femtosecond laser and graphene technology, applied in the field of graphene preparation, can solve the problems of low yield and low efficiency, and achieve the effect of improved quality, uniform temperature and improved quality

Active Publication Date: 2015-11-11
WUHAN FINEMEMS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the defects of low efficiency and low yield in existing methods for laser stripping Cu / graphene, and combines femtosecond laser technology to provide a Cu / graphene stripping method based on femtosecond laser technology

Method used

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  • Cu/graphene delamination method based on femtosecond laser technology

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Experimental program
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Embodiment 1

[0035] figure 1 It is a process flow chart of Cu / graphene exfoliation method based on femtosecond laser technology. Use CVD technology to deposit a layer of graphene 101 on the surface-treated 200um thick copper foil 102, such as figure 1 As shown in (a); the target substrate (PMMA material) 103 is bonded to graphene 101 to obtain a three-layer structure 110 of Cu / graphene / target substrate, as figure 1 As shown in (b); adjust the spot size of the femtosecond laser beam 103, and pass through the transparent target substrate (the purpose of using the femtosecond laser is to focus the laser on the interface layer, copper is opaque, so the laser cannot enter, so It must be irradiated from a transparent material) Focus on the interface between the graphene 101 and the copper foil 102, scan from the edge of the three-layer structure 110 for laser irradiation until it is completed, and the copper foil can be removed, such as figure 1 as shown in (c); as figure 1 (d) shows the exfo...

Embodiment 2

[0038] Use PECVD technology to deposit a layer of graphene 101 on the 10um thick copper foil 102 through surface treatment; The target substrate (its material is SiO 2 ) 103 and graphene 101 are directly bonded to obtain a three-layer structure 110 of Cu / graphene / target substrate; adjust the spot size of the femtosecond laser beam 103, and pass through the transparent target substrate (the purpose of using femtosecond laser It is to focus the laser on the interface layer, copper is opaque, so the laser cannot enter, so it must be irradiated from a transparent material) Focus on the interface between graphene 101 and copper foil 102, from the edge of the three-layer structure 110 Start scanning for laser irradiation until complete, the copper foil can be removed, and the exfoliated graphene and target substrate can be obtained.

Embodiment 3

[0040] The difference from Embodiment 1 is that the thickness of the copper foil is 100 um, and the material of the transparent target substrate is SiN.

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Abstract

The invention discloses a Cu / graphene delamination method based on the femtosecond laser technology, and belongs to the field of graphene preparation. The method comprises the following steps: (1) growing graphene on a copper foil; (2) bonding a transparent target substrate on graphene prepared in the step (1) to form transparent target substrate / graphene / Cu; (3) conducting scanning irradiation on one side of the upper surface of the transparent target substrate by adopting femtosecond laser, and removing the copper foil so as to obtain the graphene / transparent target substrate. The method has the advantages that the precision and the efficiency of laser delamination are improved; as a cold machining manner, the temperature of the graphene layer is uniform and small in change before and after femtosecond laser irradiation, the thermal stress of graphene and carrier substrate is effectively reduced, and the delamination quality is improved.

Description

technical field [0001] The invention relates to the field of graphene preparation, in particular to a Cu / graphene stripping method based on femtosecond laser technology. Background technique [0002] Graphene has been widely concerned since it was successfully prepared for the first time in 2004. Graphene has very special properties: (1) The thickness of single-layer graphene is 0.335nm, and the graphene film is on the order of nanometers; (2) Graphene has ultra-high Young's modulus (about 1000GPa) and fracture strength (130GPa , is 100-200 times that of steel), very stable structure, strong conductivity (carrier migration rate is extremely high, and can reach 15000cm at room temperature and liquid nitrogen temperature respectively 2 V -1 S -1 and 60000cm 2 V -1 S -1 ); (3) graphene film can be stably adhered on the surface of silicon dioxide, and has impenetrability; (4) graphene resistivity is extremely low (resistivity is only about 10 -8 Ω m, lower than common met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 刘胜付兴铭刘亦杰郑怀沈沁宇
Owner WUHAN FINEMEMS
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