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A kind of rework method of polyimide coating

A technology of polyimide coating and polyimide, applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of polyimide coating residue, testing and packaging, and the inability to achieve Issues such as imide coating rework, to achieve the effect of solving drift stacking, avoiding residue, and improving product yield

Active Publication Date: 2018-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] The present invention is aimed at the current rework process in the prior art. Due to the problem of drift and stack difference, there is polyimide coating residue on the pad, which makes testing and packaging problems, and the rework of the polyimide coating cannot be realized. and other defects provide a rework method for polyimide coatings

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  • A kind of rework method of polyimide coating
  • A kind of rework method of polyimide coating
  • A kind of rework method of polyimide coating

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Embodiment Construction

[0028] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0029] see figure 1 , figure 1 Shown is a flow chart of the rework method of the polyimide coating of the present invention. The rework method of described polyimide coating comprises the following steps:

[0030] Executing step S1: peeling off the polyimide coating on the surface of the pad opening with the first critical dimension prepared through the first mask;

[0031] Executing step S2: cleaning the wafer from which the polyimide coating has been stripped;

[0032] Executing step S3: coating polyimide material on the surface of the wafer;

[0033] Executing step S4: coating the photoresist on the polyimide material, exposing and developing with a second mask, and the second critical dimension of the pad opening prepared through...

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Abstract

Disclosed is a reworking method of a polyimide coating. The method comprises the following steps: S1, peeling the polyimide coating at the surface of a pad opening which is prepared through a first mask plate and has a first key dimension; S2, cleaning a wafer of the already peeled polyimide coating; S3, coating a polyimide material on the surface of the wafer; and S4, coating a photoresist on the polyimide material, and carrying out exposure and development through a second mask layer, wherein the second key dimension of a pad opening prepared through the second mask layer is greater than the first key dimension of the pad opening prepared through the first mask layer. According to the invention, the reworking method of the polyimide coating amplifies the key dimensions of the pad openings, increase process windows, effectively solves the drift stacking fault caused by secondary development, avoids polyimide coating residues at the pad openings and improves the product yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for reworking polyimide coatings. Background technique [0002] Polyimide (PI) material has been widely used in the passivation layer process of semiconductor devices due to its good high temperature resistance, mechanical properties, electrical properties and chemical stability, in order to reduce various natural environment Damage to semiconductor devices, thereby improving the reliability and stability of the devices. [0003] In the integrated circuit manufacturing process, the pad opening and the polyimide coating on the chip surface are usually completed in steps. That is, firstly, the pad opening is formed by coating the photoresist of the pad opening, exposure and development, dry etching, and wet cleaning process; then the polyimide is formed by coating polyimide, exposure and development process, etc. imide coating. [0004] The preparati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/033H01L21/48
CPCH01L21/02118H01L21/02282H01L21/02301H01L21/0332H01L21/0338H01L21/4853
Inventor 黄冲李志国徐杰凌松戴敏洁
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP