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Multi-wire sawing machine roller for cutting SiC single crystals with different diameters and use method of multi-wire sawing machine roller

A multi-wire cutting machine and metal cutting wire technology, which is applied to fine working devices, manufacturing tools, stone processing equipment, etc., can solve the problems of not being able to cut SiC single crystals at the same time, reduce cutting efficiency, and cumbersome operation steps, and achieve saving Reduce manpower, improve cutting efficiency, and reduce the effect of operating procedures

Inactive Publication Date: 2015-11-18
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The roller design scheme of a single roller groove cannot simultaneously cut SiC single crystals with different diameters and thin slice thickness requirements
Therefore, it is necessary to frequently disassemble and install rollers of different specifications, which greatly increases the workload; at the same time, due to the single cutting of crystals with the same diameter and the same thickness of the sheet, the time utilization rate is low and the cutting efficiency is seriously reduced.
[0005] Chinese patent document CN103009490A (application number: 201210569696.0) discloses a multi-wire cutting machine wire adjustment device that improves the cutting thickness range of the multi-wire cutting machine. , the left cutting roller and the right cutting roller with the same groove spacing are characterized in that there is a guide wheel mounting plate on the rear main board, and the guide wheel mounting plate is respectively equipped with an incoming line guide wheel set and an outgoing line guide wheel set; The first slot of the cutting roller leads out vertically, cuts into the first guide wheel on the incoming line guide wheel set, then cuts into the first guide wheel coplanar with it on the outgoing line guide wheel set, and then enters vertically downwards The second wire groove of the right cutting roller completes the groove change of the steel wire. This invention avoids the excessive crossing angle between the grooves of the cutting roller caused by the excessive distance between the V-shaped ring grooves on the cutting roller, and the occurrence of jumping wires and cutting rollers. Unfavorable phenomena such as eccentric wear, although the cutting thickness of the crystal can be adjusted, it is still necessary to use the wire adjustment device to adjust the multi-wire cutting machine before it can be realized. The operation steps are still cumbersome and affect work efficiency.

Method used

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  • Multi-wire sawing machine roller for cutting SiC single crystals with different diameters and use method of multi-wire sawing machine roller
  • Multi-wire sawing machine roller for cutting SiC single crystals with different diameters and use method of multi-wire sawing machine roller
  • Multi-wire sawing machine roller for cutting SiC single crystals with different diameters and use method of multi-wire sawing machine roller

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049]A multi-wire cutting machine roller 3 for realizing cutting of SiC single crystals with different diameters, the roller 3 is provided with a first groove section 3-1 and a second groove section 3-3, and each groove section is provided with V-shaped grooves at equal intervals , the material of the roller 3 is polyethylene material, the slotting angle of the V-shaped groove is 50°, the slot spacing of the first slot section 3-1 is 0.73mm, the slot spacing of the second slot section 3-3 is 0.85mm, the slot A transition groove 3-2 is provided between the intervals, and the width of the transition groove 3-2 is 1.5 mm. The purpose of the transition groove 3-2 is to prevent edge chipping when the roller 3 is grooved.

[0050] In this embodiment, the effective length of the roller 3 is 260mm, and 5mm is reserved at both ends of the roller. The metal cutting wire 6 has a diameter of 0.16 mm.

[0051] This embodiment operates as follows:

[0052] (1) Roller installation:

[0...

Embodiment 2

[0063] As described in Example 1, the difference is:

[0064] The material of the roller 3 is polyurethane material, and the slotting angle is 70°. The roller 3 is provided with three groove intervals of 0.6mm, 0.8mm, and 0.9mm respectively. The crystals to be cut are 3inchSiC single crystal, 4inchSiC single crystal and 6inchSiC For single crystal, the corresponding crystal thicknesses are 20mm, 15mm, and 10mm respectively; the width of the transition groove 3-2 is 1.0mm.

[0065] According to the steps in Example 1, wires were wound in slot intervals with slot spacings of 0.6 mm, 0.8 mm, and 0.9 mm, and the winding widths were 22 mm, 16 mm, and 12 mm, respectively. According to the final sheet thickness requirements, place 3inch SiC single crystals, 4inch SiC single crystals and 6inch SiC single crystals directly below the intervals of 0.6mm, 0.8mm and 0.9mm roller grooves respectively, and fix them on the workbench. Graphite flakes are placed between them, the position of t...

Embodiment 3

[0068] As described in Example 1, the difference is:

[0069] Roller 3 is provided with four groove intervals of 0.65mm, 0.78mm, 0.86 and 0.98mm respectively, and the corresponding crystals to be cut are 2inchSiC single crystal, 3inchSiC single crystal, 4inchSiC single crystal and 6inchSiC single crystal, and the corresponding thicknesses are 18mm respectively , 16mm, 14mm and 13mm. The transition groove 3-2 has a width of 1.3mm. According to the steps in Example 1, wires were respectively wound on the groove intervals of 0.65mm, 0.78mm, 0.86mm and 0.98mm of the roller, and the winding widths were 20mm, 18mm, 16mm and 15mm respectively. According to the final sheet thickness requirements, place 2inchSiC single crystal, 3inchSiC single crystal, 4inchSiC single crystal and 6inchSiC single crystal directly under the four roller groove intervals of 0.65mm, 0.78mm, 0.86 and 0.98mm respectively and fix them on the workbench 8, A graphite thin block is placed between the crystals 7...

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Abstract

The invention relates to a multi-wire sawing machine roller for cutting SiC single crystals with different diameters and a use method thereof. The roller has two or more kinds of groove sections. Grooves formed at equal intervals are formed in each groove section. The intervals of the grooves in the different groove sections are different. Transition grooves are formed between the groove sections. The invention further relates to the use method of the roller. According to the multi-wire sawing machine roller and the use method, as the roller is designed to have the different groove intervals, materials with different diameter requirements and different thickness requirements can be cut at the same time, the cutting efficiency is improved accordingly, and the aim of saving energy, materials and time is achieved; and as the roller is designed to have the different groove intervals, the frequency of roller assembling and disassembling is decreased, operation working procedures are reduced, and the working efficiency is improved.

Description

technical field [0001] The invention relates to a multi-wire cutting machine roller for realizing cutting of SiC single crystals with different diameters and a method for using the same, belonging to the field of semiconductor single crystal material processing. Background technique [0002] The multi-wire cutting method is that the metal cutting wire is guided by a set of guide wheels to form a wire network, and the cutting fluid on the high-speed reciprocating metal cutting wire generates friction with materials such as semiconductor silicon wafers, and depends on the rise of the worktable or It is a new cutting method that simultaneously cuts hard and brittle materials such as semiconductor silicon, SiC, and sapphire into hundreds of thin slices at a time. At present, CNC multi-wire cutting machine has become the main cutting method of semiconductor materials due to its extremely high production efficiency and film output rate. [0003] SiC single crystal is a typical re...

Claims

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Application Information

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IPC IPC(8): B28D5/04B28D7/00
Inventor 陈秀芳谢雪健徐现刚胡小波
Owner SHANDONG UNIV
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