Cadmium sulfide vapor phase synthesis device
A gas phase synthesis, cadmium sulfide technology, applied in the direction of cadmium sulfide, can solve the problems of complex process, low synthesis rate, etc., and achieve the effects of sufficient reaction, improved synthesis rate, and reduced synthesis chamber space
Active Publication Date: 2017-05-31
东方电气(乐山)峨半高纯材料有限公司
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] For the problems and deficiencies in the above-mentioned prior art, the object of the present invention is to provide a kind of cadmium sulfide gas phase synthesis device that can solve the problems such as complex technique and low synthesis rate that exist in the existing cadmium sulfide preparation process
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] Hereinafter, the cadmium sulfide gas phase synthesis device of the present invention will be described in detail with reference to the accompanying drawings.
[0025] figure 1 A schematic structural diagram of a cadmium sulfide gas phase synthesis device according to an exemplary embodiment of the present invention is shown.
[0026] Such as figure 1 As shown, according to the present invention, the cadmium sulfide gas-phase synthesis device includes a cadmium evaporation tube 10, a sulfur evaporation tube 20 and a synthesis tube 30 communicated with each other, the discharge port 12 of the cadmium evaporation tube and the discharge port of the sulfur evaporation tube 22 are respectively connected to the feed port 31 of the synthesis tube, and the angle between the direction in which gaseous cadmium enters the synthesis tube 30 from the cadmium evaporation tube 10 and the direction in which gaseous sulfur enters the synthesis tube 30 from the sulfur evaporation tube 20...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a gas-phase synthesis device for CdS. The gas-phase synthesis device for CdS comprises a Cd evaporating pipe, an S evaporating pipe and a synthesis pipe which are communicated with one another, wherein a discharging port of the Cd evaporating pipe and a discharging port of the S evaporating pipe are connected with a feeding port of the synthesis pipe, and an included angle between the direction in which gaseous Cd enters the synthesis pipe from the Cd evaporating pipe and the direction in which gaseous S enters the synthesis pipe from the S evaporating pipe ranges from 0 to 90 degrees. According to the gas-phase synthesis device for CdS, gaseous S and gaseous Cd do not enter a synthesis chamber in opposite directions, so that convection between two reaction gases is avoided, and the problems of insufficient reaction and low synthesis rate caused by insufficient contact between the reaction gases are solved. A baffle assembly is additionally arranged in the synthesis chamber, so that space of the synthesis chamber is reduced effectively, meanwhile, the reaction is sufficient relatively, and the synthesis rate is increased greatly and can reach 85%-90%.
Description
technical field [0001] The invention relates to the technical field of cadmium sulfide preparation, more specifically, the invention relates to a cadmium sulfide gas phase synthesis device. Background technique [0002] Cadmium sulfide (CdS) is a semiconductor material with a wide direct bandgap. Its bandgap Eg is 2.42ev and its molecular weight is 144.46. It is non-radioactive, slightly soluble in water and ethanol, soluble in acid and easily soluble in ammonia. CdS nano-film has good photoelectric conversion characteristics, can well match the visible light region of the solar spectrum and has very good transmittance to visible light. Usually, CdS nano-film is used as a window layer to form a heterojunction solar cell together with P-type semiconductor materials. In addition, due to the fact that CdS heterojunction solar cells have the advantages of high conversion rate, low cost and simple process in experimental research, cadmium sulfide will be the main research directi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C01G11/02
Inventor 曹昌威詹科张程种娜杨旭雷聪
Owner 东方电气(乐山)峨半高纯材料有限公司