Self-aligning preparation method for horizontal total-restriction phase change memory based on corrosion

Abstract

The invention provides a self-aligning preparation method for a horizontal total-restriction phase change memory based on corrosion. The self-aligning preparation method comprises the steps of growing a first electrothermal insulating material layer on a substrate, performing spin coating and photoetching for forming a longitudinal first mask layer; depositing a first functional material layer on the first electrothermal insulating material layer and forming a first functional material layer slit; preparing a phase change material layer on the first functional material layer; performing annealing and corrosion for removing the phase change material layer, thereby forming a phase change material layer nano wire; performing photoetching for forming a phase change material quantum dot which horizontally opposes an electrode layer and is localized; removing a second mask layer and depositing a second electrothermal insulating layer; removing a third mask layer; depositing a third electrothermal insulating material layer; performing photoetching for forming a fourth mask layer, performing corrosion and film deposition for forming a second functional material layer, and performing peeling for forming a testing electrode, thereby finishing device preparation. The self-aligning preparation method has advantages of low requirement for a technological precision, simple preparation, high reliability, high preparation yield, low research and development cost, and high economic performance.

Description

technical field [0001] The invention relates to the field of micro-nano manufacturing, in particular to a self-aligned preparation method of a corrosion-based horizontal fully-confined phase-change memory. This method uses the physical law that the corrosion rate of crystalline phase change materials on different substrates exceeds an order of magnitude, and effectively confines the phase change materials in the gaps of electrode materials. The preparation process of this horizontal full-confined phase-change memory with self-aligned filling characteristics has great advantages in terms of preparation accuracy, preparation difficulty, preparation yield, compatibility, and the like. Background technique [0002] Phase change memory PCRAM (phase changerandomaccessmemory) uses chalcogenide compounds as the storage medium, and relies on the thermal effect of the current to control the transformation of the phase change material between the crystalline state (low resistance) and ...

AI Technical Summary

Problems solved by technology

However, according to the conventional idea of ​​"etching out trenches - film deposition to fill phase change materials - CMP smoothing", the method of preparing phase change materials with a fully confined structure requires a high-resolution photolithography machine, film deposition and etching processes At the same time, it is also facing difficulties such as the difficulty in improving the process yield rate and the high cost of the process.

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