37results about How to "Improve alignment tolerance" patented technology

A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.

An optical intermediary component is suitable for guiding a light from an output optical path into an input optical path. The optical intermediary component includes a light guiding portion extending along a light axis. The light guiding portion has a light incident surface and a light emitting surface at two opposite ends thereof respectively. The light from the output optical path passes through the light incident surface and the light emitting surface of the light guiding portion in sequence, and is guided into the input optical path. The area of the light incident surface is greater than that of the light emitting surface. Therefore, a high assembly tolerance may reduce the manufacturing and assembly cost.

The invention relates to a tower-type pier of an uncooled infrared detector. The tower-type pier comprises an ASIC (Application Specific Integrated Circuit), wherein a polyimide sacrificial layer (3) and an electrode block (2) are arranged on the ASIC; an etch supporting hole (4-1) is formed in the polyimide sacrificial layer (3); a sputtering metal layer (4) is arranged on a wafer in which the etch supporting hole (4-1) is formed; a polyimide sacrificial layer (5) is arranged on the sacrificial layer (3), and an etch supporting hole (6-1) is formed in the polyimide sacrificial layer (5); a sputtering metal layer (6) is arranged on a wafer in which the etch supporting hole (6-1) is formed; a support layer (7) is arranged on the metal layer (6); a thermosensitive layer (8) is arranged on the support layer (7); a dielectric layer (9) is arranged on the thermosensitive layer (8); a through hole is formed in the metal layer (6) in the supporting hole; a contact hole (11) is formed in the dielectric layer (9); and electrode metal (12) is connected on the through hole (10) and the contact hole (11), and a passivation layer is deposited on the electrode metal (12) after the electrode metal (12) is connected on the through hole (10) and the contact hole (11).

The invention provides an integrated device for seamed butt joint of an AWG (arrayed waveguide grating) output waveguide and a waveguide photodetector and a preparation method of the integrated device. The integrated device comprises a substrate, the AWG output waveguide and the waveguide photodetector, wherein the left area and the right area of the substrate are taken as an AWG area and a PD (photodetector) area respectively; the AWG output waveguide is located on the AWG area on the substrate, and an AWG lower coating layer and an AWG core layer extend to the PD area; the waveguide photodetector is formed above the AWG core layer in the PD area on the substrate, and a PD lower contact layer of the waveguide photodetector extends into an AWG upper coating layer of the AWG output waveguide and is located above the AWG core layer; a PD absorbing layer and a PD upper contact layer of the waveguide photodetector are spaced with the AWG upper coating layer of the AWG output waveguide by a narrow seam. According to the integrated device and the preparation method, excessive coupling loss generated during interconnection of discrete devices is avoided, and the energy efficiency of an optical link is improved through evanescent field coupling; meanwhile, by means of the seam between the AWG output waveguide and the waveguide photodetector, the capacitance of PD devices is reduced, and the device bandwidth is increased.

The invention relates to the technical field of optical waveguide coupling and provides a multi-core planar optical waveguide structure and a coupling structure thereof. The multi-core planar optical waveguide structure comprises a main silicon dioxide waveguide for transmitting optical signals and an auxiliary waveguide for assisting light incidence, wherein the auxiliary waveguide comprises one or more auxiliary silicon dioxide waveguide bodies, and the auxiliary silicon dioxide waveguide bodies and the main silicon dioxide waveguide are arranged according to present central distances. The planar optical waveguide structure including one or more auxiliary silicon dioxide waveguide bodies can complete passive light alignment and direct coupling from a laser device to a PLC. Compared with the prior art, the alignment tolerance can be improved. Based on the improvement of the alignment tolerance, the requirement for process precision in an automatic device can be further reduced, the time for light alignment and welding can be shortened, the defective percentage is further reduced, and accordingly the purpose of reducing the costs is achieved.

The invention provides an AWG output waveguide and waveguide detector integration device and a preparation method thereof. The integration device comprises a substrate, an AWG output waveguide and a waveguide detector, and is characterized in that the AWG output waveguide is strip-shaped and located in an AWG area on the substrate, the AWG output waveguide comprises an AWG lower covering layer, an AWG core layer and an AWG upper covering layer from the bottom up, and the AWG lower covering layer and the AWG core layer extend to a PD area; and the waveguide detector is formed above the AWG cover layer of the PD area on the substrate and is arranged opposite to the AWG output waveguide, and the waveguide detector comprises a PD lower contact layer, a PD absorbing layer and a PD upper contact layer from the bottom up. According to the invention, light transmitted in the AWG output waveguide is coupled to the PD absorbing layer of the waveguide detector layer by layer from the AWG core layer in a mode of evanescent field coupling from the bottom up, thereby avoiding excessive coupling loss in interconnection of discrete devices, and improving the energy efficiency in an optical link by using evanescent field coupling.

A method for manufacturing a printed circuit board with a conical optical waveguide includes the following steps that firstly, a substrate is manufactured, wherein the substrate is formed by a copper-clad plate, a medium layer is arranged in the middle of the copper-clad plate, and copper layers are arranged on the two sides of the copper-clad plate; secondly, an optical waveguide layer is manufactured, wherein an upper wrapper, a core layer and a lower wrapper are sequentially manufactured on the substrate, wherein the area of the cross section of the core layer of the optical waveguide gradually decreases in the optical signal propagation direction, the area of the cross section of the input end of the core layer of the optical waveguide is larger than the area of the cross section of the output end of the core layer, and then the conical optical waveguide is formed; thirdly, a matched printed circuit board is manufactured; fourthly, the printed circuit board and the substrate with the optical waveguide layer are laminated to form a mixed plate with the optical waveguide layer and the copper layers; fifthly, the mixed plate is subsequently machined through the drilling step, the electroplating step, the graph manufacturing step, the green oil coating step, the surface processing step, the cleaning step, the examining step, the cleaning step and the packaging step. According to the method, optical waveguide coupling loss of the circuit board can be effectively reduced, and the alignment tolerance of an optical fiber or the optical waveguide can be increased under the same coupling loss requirement.