Semiconductor LED and its preparing process

A technology of light emitting diodes and semiconductors, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing light extraction efficiency, and achieve the effects of improving light extraction efficiency, improving light extraction efficiency, and optimizing design and processing.

Inactive Publication Date: 2004-07-14
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

S.Nakamura (J.Cryst.Growth 201/202, 290(1999)) GaN-based blue-green LED's light-emitting surface adopts a transparent electrode method outside t

Method used

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  • Semiconductor LED and its preparing process
  • Semiconductor LED and its preparing process
  • Semiconductor LED and its preparing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0093] Honeycomb and concentric ring-type InGaN-based quantum well blue light-emitting diodes

[0094] 1. Using metal oxide chemical vapor deposition (MOCVD) equipment to grow InGaN multiple quantum well (MQW) epitaxial wafers, the hierarchical structure of the epitaxial wafers is:

[0095] P-GaN (thickness d=50-300nm, carrier concentration p=3-5×10 17 cm -3 ) / P-AlGaN (aluminum gallium nitrogen) (d=5-20nm, p=1-3×10 17 cm -3 ) / 3 quantum well [In x Ga 1-x N(indium composition x=0.18-0.25, d=20-30nm) / GaN(d=70-100nm)]QW / n-GaN(d=2000-3000nm, carrier concentration n=2×10 18 cm -3 ) / GaN buffer layer (d=25-30m) / sapphire substrate;

[0096] 2. Deposit p-type ohmic contact double-layer metal film gold (5-500 nm) / nickel (5-40 nm) by DC sputtering technology;

[0097] 3. Formed on the sample by ordinary photolithography technology Figure 4 the figure of (a) or (b);

[0098] 4. Using photoresist as a mask, argon (Ar) ion beam etching and boron trichloride (BCl) 3 ) reactive ion...

Embodiment 2

[0102] Honeycomb and Concentric Ring InGaAlP Quantum Well Red Light Emitting Diodes

[0103] 1. Using MOCVD InGaAlP quantum well (QW) epitaxial wafer;

[0104] 2. Deposit p-type ohmic contact double-layer metal film gold (100-500 nanometers) / chromium (20-40 nanometers) by vacuum thermal evaporation technology, and carry out in-situ alloying (400-450 ° C, 2 -5 minutes);

[0105] 3. Use ordinary photolithography technology to form a layout on the sample Figure 4 the figure of (a) or (b);

[0106] 4. Using photoresist as a mask, Ar ion beam etching is carried out successively, and the total etching depth reaches the n-type region;

[0107] 5. Vacuum thermal evaporation and alloying of the n-type ohmic contact alloy film of gold-germanium-nickel (AuGeNi) on the back (400-450°C, 2-5 minutes).

Embodiment 3

[0109] Preparation steps of FIB concentric ring-type InGaN-based quantum well blue light-emitting diode:

[0110] 1. Adopt MOCVD equipment to grow InGaN multiple quantum well (MQW) epitaxial wafer (same as embodiment 1);

[0111] 2. With embodiment 1 step 2;

[0112] 3. Using ordinary photolithography technology to form a plate on the epitaxial wafer Figure 4 the graphic of (d);

[0113] 4. Using photoresist as a mask, perform BCl 3 Reactive ion etching, the total etching depth reaches the n-type region;

[0114] 5. Version Figure 4 (c) performing photolithographic overlay;

[0115] 6. Deposition of n-type ohmic contact bilayer metal film gold (5-500 nm) / titanium (5-40 nm) by DC sputtering and lift-off technology

[0116] 7. Rapid annealing in a nitrogen atmosphere to form an ohmic contact (450-500°C, 2-5 minutes);

[0117] 8. Press the plate on the p-zone round table Figure 4 (a) or 4(b) perform FIB etching, and the etching depth reaches the n-type region.

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Abstract

A semiconductor LED is composed of ordinary LED chip, disk type mesa basic luminous cavity, microstructure and electrodes. A 2D periodical microstructure is etched on the top of mesa P-type metal electrode by photoetching and dry etching or FIB techniques. Said period is sub-micron or micron class. Its advantage is high light intensity increased by 1.6-8 time. It is suitable for blue or green InGaN-base quantum trap LEDs.

Description

Technical field: [0001] The invention relates to a semiconductor light emitting device and a manufacturing method thereof, in particular to a semiconductor light emitting diode and a manufacturing method thereof. Background technique: [0002] Semiconductor light-emitting diodes (LEDs) are low-cost and long-life solid-state light sources, especially semiconductor light-emitting diodes in the visible light band, which have a wide range of applications in indoor lighting, flat panel display, short-range communication, and optical interconnection in computers. Although semiconductor light-emitting diodes (LEDs) have high internal luminous efficiency, ordinary LEDs only have a light output efficiency of a few percent. How to extract most of the light that is confined due to the internal total reflection of high-refractive index semiconductors? Developing and producing light-emitting diodes with high light extraction efficiency has always been a difficult problem to be solved urg...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/04
Inventor 章蓓张国义俞大鹏栾峰王大军
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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