Unlock instant, AI-driven research and patent intelligence for your innovation.

Carrying device and plasma etching apparatus

A technology for carrying devices and auxiliary heaters, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as uneven etching, achieve the effects of improving uniformity, simple design, and reducing design and development costs

Inactive Publication Date: 2015-11-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] As the size of the substrate increases, the inhomogeneity of the temperature field in the central area of ​​the substrate surface and the temperature field in the edge area of ​​the wafer becomes more and more obvious, and the unevenly distributed temperature field causes the central area and the edge area of ​​the substrate 5 to be uneven. etch non-uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carrying device and plasma etching apparatus
  • Carrying device and plasma etching apparatus
  • Carrying device and plasma etching apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0028] As an aspect of the present invention, a carrying device is provided, such as image 3 shown. image 3 It is a structural schematic diagram of an embodiment of the carrying device provided by the present invention, the carrying device includes an electrostatic chuck 8, an edge ring assembly arranged around the electrostatic chuck 8, and a main heater arranged in the electrostatic chuck 8, Wherein, the carrying device may further include an auxiliary heater 12, and the auxiliary heater 12 is arranged in the edge ring assembly.

[0029] It should be understood that the main heater disposed in the electrostatic chuck 8 is used to heat the substrate 5 dispo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a carrying device. The carrying device comprises an electrostatic chuck, an edge ring assembly disposed around the electrostatic chuck d and a main heater disposed in the electrostatic chuck. The carrying device further comprises an auxiliary heater. The auxiliary heater is disposed in the edge ring assembly. Accordingly, the invention also provides a plasma etching apparatus comprising the above-described carrying device. The carrying device provided by the invention can be used for effective temperature control of an edge region of a substrate, improving the temperature uniformity of a central region and the edge region without the upgrade setting of the electrostatic chuck upgrade and reducing process costs.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing equipment, in particular to a carrying device and plasma etching equipment including the carrying device. Background technique [0002] Electrostatic chucks are widely used in integrated circuit (IC) manufacturing processes, especially in plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes, for fixing in the reaction chamber , support and transport the wafer, provide DC bias for the wafer and control the temperature of the wafer surface. [0003] figure 1 It is a schematic structural diagram of an electrostatic chuck in the prior art. like figure 1 The electrostatic chuck shown includes an insulating layer 1 , a main heater 2 , a heat insulating layer 4 and a base 3 stacked in sequence from top to bottom. Wherein, the insulating layer 1 is made of ceramic materials such as Al2O3 or AlN, and a DC electrode layer (not show...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/683H01L21/265
Inventor 彭宇霖
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD