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Semiconductor element manufacturing method and manufactured element

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as semiconductor component operation failure

Active Publication Date: 2015-11-25
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the conductive material overflows to form conductive bridges and bridge adjacent wires, it will cause the semiconductor device to fail to operate.

Method used

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  • Semiconductor element manufacturing method and manufactured element
  • Semiconductor element manufacturing method and manufactured element
  • Semiconductor element manufacturing method and manufactured element

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Experimental program
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Embodiment Construction

[0027] An embodiment of the invention provides a method for manufacturing a semiconductor device. According to an embodiment, a method for manufacturing a semiconductor device includes the steps of forming a recess in a conductive trench (ie, the trench is filled with a conductor, such as copper), and filling the recess with an additional barrier layer on the conductor. The conductor in the trench has an extremely flat surface, thus providing excellent adhesion between the conductor and the additional barrier layer. Therefore, the electronic characteristics of the semiconductor device manufactured by the manufacturing method of the embodiment of the present invention can be greatly improved, such as increasing the breakdown voltage of the semiconductor device (breakdown voltage), and effectively solving the problem of device operation caused by the formation of a conductive bridge caused by the overflow of traditional improper conductor materials. failure problem.

[0028] Em...

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PUM

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Abstract

The invention discloses a semiconductor element manufacturing method and a manufactured element. According to the embodiment, the method comprises: providing a substrate and a dielectric layer formed on the substrate; forming a plurality of trenches on the dielectric layer, wherein the trenches are separated by the dielectric layer; forming a first barrier cap layer in the trenches to be used as barrier liners of the trenches; filling a conductor in the trenches; removing partial conductor in the trenches to form a plurality of recesses, wherein the left conductor is provided with a flat surface; and forming a second barrier layer at the recesses to be used as barrier caps of the trenches.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor element and the manufactured element, and in particular to a manufacturing method of a semiconductor element which improves the electronic characteristics of the manufactured semiconductor element by forming a barrier layer. Background technique [0002] In recent years, semiconductor elements have been increasingly reduced in size. For semiconductor technology, in addition to continuously reducing the size of semiconductor structures, improving speed, increasing performance, increasing density and reducing costs are all important development goals. As the size of semiconductor components shrinks, the electronic characteristics of the components must also be maintained or even improved in order to meet the requirements of market products. For example, if each layer of the semiconductor structure and its components are defective or damaged, it will have a non-negligible impact o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/528
Inventor 许信国许力介陈祥豪薛忠伟
Owner UNITED MICROELECTRONICS CORP