N-channel non-volatile flash memory device and compiling, erasing and reading method thereof

Abstract

The invention discloses an N-channel non-volatile flash memory device and a compiling, erasing and reading method thereof. The N-channel non-volatile flash memory device includes a P type silicon substrate with an N type doped source end, a drain end and an N channel which are formed therein, and a gate structure which is formed on the substrate and is located between the source end and the drain end and includes a gate oxide layer, a polysilicon floating gate, a first silicon oxide layer, a silicon nitride layer, a second silicon oxide layer and a polysilicon control gate which are distributed sequentially from bottom to top, wherein the polysilicon floating gate is used for storing charges. According to the flash memory device provided by the invention, a low-power consumption band-to-band-tunneling hot-hole injection compiling and channel FN electron tunneling erasing method is adopted, and therefore, the problem of high consumption of original channel hot electron injection programming can be solved, and a traditional floating gate transistor structure can have a smaller gate length, and the problem of erasure saturation which cannot be solved by a traditional p-channel B4-Flash can be solved, and the N-channel non-volatile flash memory device can be manufactured more easily.

Description

technical field [0001] The present invention relates to the technical field of semiconductor memory, more specifically, to a non-volatile flash memory device with an N-type doped channel and its compiling, erasing and reading methods. Background technique [0002] For the NOR flash memory unit, the most important factor limiting the further reduction of its size is the further shortening of the gate length. This is mainly because the compilation method of channel hot electron (CHE) injection used in NOR flash memory cells requires a certain voltage at the drain of the device, and this voltage has a great impact on the penetration of the source and drain. Therefore, channel hot electron (CHE) injection is not suitable for short-channel devices. Another problem is that NOR flash memory is limited by the programming rate compared with NAND and AND data storage devices. According to the prediction of the document "G. Servalli, et al., IEDMTech. Dig., 35_1, 2005", the physical ...

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Problems solved by technology

[0006] The object of the present invention is to overcome the above-mentioned defect that prior art exists, provide a kind of N-channel non-volatile flash memory device and compiling, erasing and reading method thereof, can overcome the erasing problem that existing p-channel B4-Flash exists Eliminate the problem of saturation, and solve the problem of high power consumption in the existing channel hot electron injection programming by using low-power programming and erasing methods

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