The invention discloses an N-channel non-volatile
flash memory device and a compiling, erasing and reading method thereof. The N-channel non-volatile
flash memory device includes a
P type silicon substrate with an N type doped source end, a drain end and an
N channel which are formed therein, and a gate structure which is formed on the substrate and is located between the source end and the drain end and includes a
gate oxide layer, a polysilicon floating gate, a first
silicon oxide layer, a
silicon nitride layer, a second
silicon oxide layer and a polysilicon control gate which are distributed sequentially from bottom to top, wherein the polysilicon floating gate is used for storing charges. According to the
flash memory device provided by the invention, a low-
power consumption band-to-band-tunneling hot-hole injection compiling and channel FN
electron tunneling erasing method is adopted, and therefore, the problem of high consumption of original channel
hot electron injection
programming can be solved, and a traditional floating gate
transistor structure can have a smaller
gate length, and the problem of erasure saturation which cannot be solved by a traditional p-channel B4-Flash can be solved, and the N-channel non-volatile flash memory device can be manufactured more easily.