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Arrayed waveguide grating spectrum planarization method

An arrayed waveguide grating and flattening technology, which is applied to optical waveguides, light guides, optics, etc., can solve the problems of narrow 3dB bandwidth and inability to make simple multi-channel large-scale arrayed waveguide gratings, etc., and achieves easy implementation, flexible and convenient application. , make simple effects

Inactive Publication Date: 2015-12-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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Problems solved by technology

[0008] In view of this, the present invention will solve the problem that the 3dB bandwidth of the traditional arrayed waveguide grating is relatively narrow, and the existing solutions cannot take into account the problems of simple manufacture and application in multi-channel large-scale arrayed waveguide gratings. , providing a solution for spectral flattening of arrayed waveguide gratings

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specific Embodiment

[0040] Specific embodiment: SOI-based arrayed waveguide grating planarization spectrum method.

[0041] Silicon nanowires based on silicon-on-insulator (SOI) materials are selected. The thickness of the top layer of silicon is 220nm, and the refractive index of the material is 3.4744; the cladding layer is 3μm thick silicon dioxide, and the refractive index is 1.44; .

[0042] The size of the waveguide (including the array waveguide, the input and output waveguides) is 450nm, the ridge waveguide is used, and the etching depth is 130nm. Design a 1×4 arrayed waveguide grating with a center wavelength of 1565nm and a channel spacing of 8nm.

[0043] In this embodiment, the following planarization method is adopted:

[0044] 1. Keep the original size unchanged, and add an exponentially changing tapered structure at the connection between the ridge waveguide (input / output waveguide and waveguide array) and the slab waveguide as a pre-broadening area. The pre-broadened region gen...

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Abstract

The invention discloses an arrayed waveguide grating spectrum planarization method. The method is based on a planar optical waveguide technology and has an effect of improving channel bandwidth of arrayed waveguide grating. The method comprises the steps that a transition region (a preview width region) which has a porous structure (7) and is used for transition of strip waveguide (or ridge waveguide) and slab waveguide is designed and manufactured at the connecting part (6) of the ridge or strip waveguide (including input waveguide, output waveguide and waveguide arrays) and the slab waveguide of the arrayed waveguide grating so that an effect of mode field preview width can be achieved. When an optical mode field reaches the boundary of the slab waveguide through waveguide transmission and the porous structure, an original Gaussian mode field is transformed into optical mode field distribution similar to a rectangle so that flat spectrum response can be obtained. The method is easy and feasible and is suitable for large-scale multi-input multi-output arrayed waveguide grating and can be completed only by a standard planar waveguide manufacturing technology.

Description

technical field [0001] The invention belongs to the field of planar optical waveguide device design and planar optical waveguide integration, and in particular relates to a method for flattening the spectrum of an arrayed waveguide grating. Background technique [0002] In recent years, in order to break through the limitation of "electronic bottleneck", photon has been widely regarded as a new information carrier. In the field of long-distance communication, optical communication has achieved great success with its advantages of high bandwidth and low loss; with the development of technology, optical communication will develop towards higher integration density and shorter transmission distance. In order to obtain greater data transmission capacity in optical communication systems, wavelength division multiplexing technology, especially wavelength division multiplexing devices based on planar optical waveguides, has been widely used. [0003] A traditional core device of w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/12
CPCG02B6/12011G02B6/12009G02B6/12019
Inventor 叶彤储涛付云飞
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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