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A Junction Termination Structure for Lateral High Voltage Power Devices

A power device and lateral high voltage technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of device withstand voltage not being optimal, power device breakdown, etc., to avoid premature breakdown, optimize breakdown voltage, Improving the effect of charge imbalance

Active Publication Date: 2018-10-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under the triple RESURF structure device, the patent does not optimize the terminal structure of the connecting part of the straight junction terminal structure and the curvature junction terminal structure. In the connected part, due to the imbalance of charges, the power device will break down early, so the device Pressure resistance is not optimal

Method used

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  • A Junction Termination Structure for Lateral High Voltage Power Devices
  • A Junction Termination Structure for Lateral High Voltage Power Devices
  • A Junction Termination Structure for Lateral High Voltage Power Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] like Figure 5 As shown, the structure of this example includes a linear knot terminal structure and a curvature knot terminal structure;

[0027] The linear junction terminal structure is the same as that of the active region of the lateral high-voltage power device, including the drain N + Contact region 1, N-type drift region 2, P-type substrate 3, gate polysilicon 4, gate oxide layer 5, P-well region 6, source N + Contact area 7, source P +Contact region 8, P-type buried layer 9; P-well region 6 and N-type drift region 2 are located on the upper layer of P-type substrate 3, wherein P-well region 6 is located in the middle, with N-type drift region 2 on both sides, and P- The well region 6 is connected to the N-type drift region 2; the two sides of the N-type drift region 2 away from the P-well region 6 are the drain N + The surface of the contact region 1, the P-well region 6 has a source N connected to the metallized source + contact area 7 and the source P + ...

Embodiment 2

[0032] like Image 6 As shown, the difference between this example and Example 1 is that the inner wall of the ring-shaped P-type buried layer 9 in the curvature junction termination structure in this example is located in the N-type drift region 2, and the principle is the same as that of Example 1.

Embodiment 3

[0034] like Figure 7 As shown, the difference between this example and Example 1 is that in this example, the connection between the P-type buried layer 9 and the P-type buried layer 9 in the curvature junction terminal structure is located in the N-type drift region, and the principle is the same as that of Example 1. .

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Abstract

The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. In the structure of the present invention, in the connecting part of the linear junction terminal structure and the curvature junction terminal structure, in the Y direction, the distance between the P-type buried layer and the N-type drift region is 5 microns. In the actual process, the N-type drift region 2 is formed by ion implantation. After annealing and pushing the junction, the N-type drift region will diffuse in the Y direction, and the P-type buried layer will exceed the N-type drift region 2 by some distance, so that the diffused N The P-type drift region is depleted with P-type impurities. In this way, the problem of charge imbalance can be improved in the connecting part of the straight junction terminal structure and the curvature junction terminal structure, thereby obtaining a more optimized breakdown voltage. The beneficial effect of the present invention is to improve the problem of charge imbalance in the connection part of the linear junction terminal structure and the curvature junction terminal structure, avoid premature breakdown of the device, and obtain an optimized breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the closed racetrack structure and the interdigitated structure, there will be small curvature terminations in the curved part and the fingertip part, and the electric field lines are easy to concentrate at the small curvature radius, which will lead to early avalanche breakdown of the device at the small curvature radius , which poses new challenges to the layout structure of lateral high-voltage power devices. [0003] The Chinese patent with publication number CN102244092...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78
CPCH01L29/0634H01L29/7833
Inventor 乔明王裕如张晓菲代刚周锌何逸涛张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA