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Electroplating bath body of crystalline silicon cell
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A technology of crystalline silicon cells and electroplating tanks, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as uneven grid line width, grid line disconnection, grid line falling off, etc., to achieve high efficiency and solve price increases. , the effect of low cost
Inactive Publication Date: 2015-12-09
GUODIAN NEW ENERGY TECH INST +1
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Problems solved by technology
[0004] The technical problem to be solved in the present invention is to carry out copper electrodetechnology research and development on the basis of heterojunction batteries, and provide an electroplating tank body for crystalline silicon batteries. The bottom of the anode is higher than the bottom of the cathode, and the bottom of the anode is provided with a plastic strip, which overcomes the Technical problems such as grid line disconnection, grid line width unevenness, grid line falling off, etc.
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Embodiment 1
[0061] A method for preparing a heterojunction battery, comprising the steps of:
[0062] a) Depositing copper on the silicon wafer to form an electrode layer;
[0065] In described a) step, the structure of described silicon wafer comprises ITO layer, P-Si layer, i-Si layer, Si substrate, N-Si layer, i-Si layer and ITO layer (as Figure 4 shown). Copper is deposited on both sides of the silicon wafer to form an electrode layer; the deposition is carried out by radio frequency, the frequency of radio frequency is 12-16MHz, the working gas is argon, and the target material is copper. The process condition of deposition in the described a) step is as follows, the background vacuum is 5×10 -5 Pa, the working pressure is 0.1-0.5Pa, the sputtering power is 200-400W, the sputtering time is 200-280S, and the silicon wafer temperature is 90-110°C.
[0083] A heterojunction battery, a heterojunction battery, the electrodes of the heterojunction battery are copper electrodes, and copper electrodelayers are arranged on the upper and lower surfaces of a silicon wafer; the structure of the silicon wafer includes an ITO layer, a P- Si layer, i-Si layer, Si substrate, N-Si layer, i-Si layer and ITO layer.
Embodiment 3
[0085] The electroplating tank body of prior art (as figure 2 As shown), the depth of anode 1 is deeper than that of cathode 3, resulting in dense power lines at the bottom; the bottom of anode 1 is not shielded, and power lines will also be generated; anode 1 is modified, resulting in an unstable distance between cathode and anode; the liquid level is too close to the upper end of the cathode, and the ion exchange is insufficient .
[0086] Electroplating tank body of the present invention (as image 3 Shown) and the electroplating tank body of prior art (as figure 2 As shown), the height of the tank is 2-4cm, the anode 1 is raised by 1-1.5cm, the bottom of the anode 1 is covered with a plastic strip; the desoldering of the anode 1 is bound with a binding tape. The middle line width is 60-80um, and the edge line width is about 80-90um.
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Abstract
The invention relates to an electroplating bath body of a crystalline siliconcell, and is characterized in that the electroplating bath body includes a bath body, a cathode and anodes, the bottoms of the anodes in the bath body are higher than the bottom of the cathode, and the bottoms of the anodes are provided with plastic strips. A copperelectrodeheterojunctioncell provided by the invention has the following beneficial technical effects: the problem that silver reserves are limited and the price of silver will rise in the future is solved, and requirements of future development of the photovoltaic industry are satisfied; 2. compared with a present traditional crystalline siliconcell, the copperheterojunction cell has the advantages of lower cost and higher efficiency, particularly can improve power generation capacity per unit area, and is more suitable for distributed generation; and 3. the success of research and development of a copperelectrode technology solves the problems of low-level overlapping investment and insufficient technological innovativeness of the photovoltaic industry of China.
Description
technical field [0001] The invention relates to an electroplating tank body of a crystalsilicon battery. Background technique [0002] The screen printingsilver paste process commonly used in the traditional crystalline silicon cell process cannot meet the production needs of future solar cells due to the high cost of silver and limited resources. Moreover, the screen printing process needs to exert a certain pressure on the siliconwafer, which can easily lead to the problem of debris. Traditional crystalline silicon battery products have technical defects such as edge leakage, whitening of ITO after electroless tin plating, disconnection of gate lines, uneven width of gate lines, and falling off of gate lines. [0003] The invention provides a novel copper electrode polarization technology, which exerts little external pressure on the silicon chip or realizes a non-contact process, can realize low fragment rate production, and has lower battery manufacturing cost and hi...
Claims
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