Unlock instant, AI-driven research and patent intelligence for your innovation.
A kind of heterojunction battery and its preparation method
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of heterojunction cells and seeds, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of uneven grid line width, ITO whitening, grid line falling off, etc., to achieve high efficiency, solve price increases, low cost effect
Active Publication Date: 2017-07-28
GUODIAN NEW ENERGY TECH INST +1
View PDF3 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0004] The technical problem to be solved in the present invention is to conduct research and development of copper electrode technology based on heterojunction cells, and provide a solar cell and its preparation method. The heterojunction solar cell with electrodes overcomes technical problems such as edge leakage, whitening of ITO after electroless tin plating, broken grid lines, uneven grid line width, and grid line shedding.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0059] A method for preparing a heterojunction battery, comprising the steps of:
[0060] a) Depositing copper on the silicon wafer to form an electrode layer;
[0063] In described a) step, the structure of described silicon wafer comprises ITO layer, P-Si layer, i-Si layer, Si substrate, N-Si layer, i-Si layer and ITO layer (as Figure 4 shown). Copper is deposited on both sides of the silicon wafer to form an electrode layer; the deposition is carried out by radio frequency, the frequency of radio frequency is 12-16MHz, the working gas is argon, and the target material is copper. The process condition of deposition in the described a) step is as follows, the background vacuum is 5×10 -5 Pa, the working pressure is 0.1-0.5Pa, the sputtering power is 200-400W, the sputtering time is 200-280S, and the silicon wafer temperature is 90-110°C.
[0081] A heterojunction battery, a heterojunction battery, the electrodes of the heterojunction battery are copper electrodes, and copper electrode layers are arranged on the upper and lower surfaces of a silicon wafer; the structure of the silicon wafer includes an ITO layer, a P- Si layer, i-Si layer, Si substrate, N-Si layer, i-Si layer and ITO layer.
Embodiment 3
[0083] The electroplating tank body of prior art (as figure 2 As shown), the depth of anode 1 is deeper than that of cathode 3, resulting in dense power lines at the bottom; the bottom of anode 1 is not shielded, and power lines will also be generated; anode 1 is modified, resulting in an unstable distance between cathode and anode; the liquid level is too close to the upper end of the cathode, and the ion exchange is insufficient .
[0084] Electroplating tank body of the present invention (as image 3 Shown) and the electroplating tank body of prior art (as figure 2 As shown), the height of the tank is 2-4cm, the anode 1 is raised by 1-1.5cm, the bottom of the anode 1 is covered with a plastic strip; the desoldering of the anode 1 is bound with a binding tape. The middle line width is 60-80um, and the edge line width is about 80-90um.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention relates to a preparation method of a heterojunctioncell. The preparation method is characterized by including the steps of: 1) depositing copper on a siliconwafer, thereby forming an electrode layer; b) performing photoetching; and c) carrying out a wet process and electroplating. The copperelectrodeheterojunctioncell provided by the invention has the following beneficial technical effects: 1. the problem that silver reserves are limited and the price of silver will rise in the future is solved, and requirements of future development of the photovoltaic industry are satisfied; 2. compared with a present traditional crystalline siliconcell, the copperheterojunction cell has the advantages of lower cost and higher efficiency, particularly can improve power generation capacity per unit area, and is more suitable for distributed generation; and 3. the success of research and development of a copper electrode technology solves the problems of low-level overlapping investment and insufficient technological innovativeness of the photovoltaic industry of China.
Description
technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to a heterojunction cell and a preparation method thereof. Background technique [0002] The screen printingsilver paste process commonly used in the traditional crystalline silicon cell process cannot meet the production needs of future solar cells due to the high cost of silver and limited resources. Moreover, the screen printing process needs to exert a certain pressure on the siliconwafer, which can easily lead to the problem of debris. Traditional crystalline silicon battery products have technical defects such as edge leakage, whitening of ITO after electroless tin plating, disconnection of gate lines, uneven width of gate lines, and falling off of gate lines. [0003] The invention provides a novel copper electrode polarization technology, which exerts little external pressure on the siliconchip or realizes a non-contact process, can realize low fragment ra...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More