GaN-base LED chip preparation method capable of achieving high-efficient packaging

Abstract

Provided is a GaN-base LED chip preparation method capable of achieving high-efficient packaging. The method comprises following steps of: (1) preparing an epitaxial wafer and vapor plating the surface of the epitaxial wafer with an ITO transparent conductive layer; (2) making a P electrode and an N electrode, keeping a photoresist mask on the P electrode and the N electrode; (3) cutting the epitaxial wafer to form single-chip units and cutting the epitaxial wafer to the substrate in order to form isolating grooves between adjacent chip units; (4) depositing SiO2 on the surface of the epitaxial wafer equipped with isolating grooves, and removing the photoresist mask on the surfaces of the chip electrodes by using wet etching; (5) metallically connecting the chip units; and (6) cutting a required LED chip according to a packaging requirement. The method performs serial-parallel connection and then performs a packaging process in an LED chip technical process, may cut a corresponding chip as required, directly packages the chip, and has characteristics of convenient packaging operation process, high packaging efficiency, low cost, stable product performance, high light-emitting efficiency, and good reliability.

Description

technical field [0001] The invention relates to a method for preparing a GaN-based LED chip, belonging to the technical field of LED chip preparation. Background technique [0002] As the core component of semiconductor lighting, LED chips are faced with increasingly severe market conditions, and higher requirements are put forward for the manufacturing methods of LED chips in terms of how to increase the optical power of chips, improve packaging efficiency, and reduce packaging costs. As we all know, after the production and processing of LED chips is completed, the chips need to be packaged into LED lamp beads. The chip presented in the current LED market is to divide the complete epitaxial wafer into individual small units after the tube core process is completed. Each unit is an LED chip, and each chip has a positive pole, a Negative electrode, when packaging, each LED chip unit needs to be fixed on an LED bracket, and then use special wire bonding equipment to connect ...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the disadvantages of low production efficiency, high defect rate, and poor reliability in the packaging production and processing process of the existing single LED chip, the present invention provides a LED chip with high optical power, high packaging efficiency, high yield, and good reliability. Preparation method of GaN-based LED chip with low packaging cost and high-efficiency packaging

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