Electrodes for semiconductor devices and methods of forming the same

Abstract

An III-N semiconductor HEMT device includes an electrode-defining layer on a III-N material structure. The electrode-defining layer has a recess with a first sidewall proximal to the drain and a second sidewall proximal to the source, each sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a larger width than a portion of the recess proximal to the III-N material structure. An electrode is in the recess, the electrode including an extending portion over the first sidewall. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The first sidewall forms a first effective angle relative to the surface of the III-N material structure and the second sidewall forms a second effective angle relative to the surface of the III-N material structure, the second effective angle being larger than the first effective angle.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Patent Application No. 61 / 765,635, filed February 15, 2013. The disclosure of the prior application is considered a part of the disclosure of the present application and is incorporated by reference into the disclosure of the present application. technical field [0003] The present invention relates to semiconductor electronic devices and, in particular, to devices having electrodes connected to field plates. Background technique [0004] To date, modern power semiconductor diodes, such as high-voltage P-I-N diodes, and power transistors, such as power MOSFETs and insulated gate bipolar transistors (IGBTs), have generally been fabricated from silicon (Si) semiconductor materials. Recently, silicon carbide (SiC) power devices have been studied due to their excellent performance. III-nitride (III-N) semiconductor devices are now emerging as an attractive candidate to ...

AI Technical Summary

Problems solved by technology

However, reducing the angle 26 results in a longer lateral extension of the field plate 24 towards the drain 15, which may require a larger spacing between the gate 16 and the drain 15

Furthermore, it is difficult to reproducibly manufacture slanted field plates 24 with such small corners 26

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