Novel Czochralski silicon single crystal doping method with resistivity control function
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
- Publication Date
- 2015-12-30
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention belongs to the field of silicon single crystal production, and in particular relates to a novel Czochralski silicon single crystal doping method which can control resistivity. Background technique
[0002] At present, the resistivity control of Czochralski single crystal at the semiconductor level is used in China to calculate the weight of the required dopant according to the amount of feed and the resistivity of the dopant, and the calculated weight of the dopant is combined with the polycrystalline raw material. Put into the Czochralski single crystal furnace, and follow the steps of evacuation, materialization, necking, shoulder expansion, maintenance, finishing, and shutdown according to the crystal pulling steps to obtain a single crystal with corresponding resistivity. When there is a problem with the calculated value for some reasons, or some calculations When the required value is inaccurate, the method used in China is to pull a...