Novel Czochralski silicon single crystal doping method with resistivity control function

Abstract

The invention provides a novel Czochralski silicon single crystal doping method with a resistivity control function. The method comprises the steps such as primary temperature stabilization, cooling, container pulling, placement of a doping agent, fusion and secondary temperature stabilization, and is characterized in that when resistivity adjustment is needed for single crystal pulling in a Czochralski process, a seed crystal is matched with an original material to be processed into a novel doping tool for doping; the doping tool is simple and free from impurity introduction, so that not only can the doping tool be prevented from being polluted, but also materials or equipment can be conserved; the doping tool needs not to be taken out after the doping is finished, so that the time consumption and the single crystal pulling cost are reduced; moreover, the resistivity of a silicon single crystal doped according to the method can be controlled, and the qualified rate of finished products of the silicon single crystal is relatively high.

Description

technical field [0001] The invention belongs to the field of silicon single crystal production, and in particular relates to a novel Czochralski silicon single crystal doping method which can control resistivity. Background technique [0002] At present, the resistivity control of Czochralski single crystal at the semiconductor level is used in China to calculate the weight of the required dopant according to the amount of feed and the resistivity of the dopant, and the calculated weight of the dopant is combined with the polycrystalline raw material. Put into the Czochralski single crystal furnace, and follow the steps of evacuation, materialization, necking, shoulder expansion, maintenance, finishing, and shutdown according to the crystal pulling steps to obtain a single crystal with corresponding resistivity. When there is a problem with the calculated value for some reasons, or some calculations When the required value is inaccurate, the method used in China is to pull a...

AI Technical Summary

Problems solved by technology

[0003] However, this kind of tool for secondary doping generally has high quality requirements, short service life, and may cause hidden dangers in the quality of single crystals.