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magnetic sensor

A technology of magnetic sensor and magnetoresistive element, applied in the field of magnetic sensor, to achieve the effect of improving isotropy

Active Publication Date: 2018-04-27
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the magnetic sensors described in Patent Documents 3 to 5, there is room for further improvement in the isotropy of magnetic field detection.

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0051] figure 1 It is a plan view showing the pattern of four magnetoresistive elements constituting the bridge circuit of the magnetic sensor according to Embodiment 1 of the present invention. figure 2 is an equivalent circuit diagram of the magnetic sensor according to Embodiment 1 of the present invention.

[0052] Such as figure 1 , 2 As shown, the magnetic sensor 100 according to Embodiment 1 of the present invention includes four magnetoresistive elements electrically connected to each other to form a Wheatstone bridge-type bridge circuit. The four magnetoresistive elements include two first magnetoresistive elements 120a, 120b and two second magnetoresistive elements 130a, 130b.

[0053] The respective resistance change rates of the two first magnetoresistive elements 120a, 120b are greater than the respective resistance change rates of the two second magnetoresistive elements 130a, 130b. The two first magneto-resistive elements 120a and 120b are so-called magneti...

Embodiment approach 2

[0099] Figure 8 It is a plan view showing the pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 2 of the present invention. Figure 9 It is a plan view showing unit patterns included in the pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 2 of the present invention. It should be noted that, in Figure 8 In , only one of the two patterns 230 each having the same shape of the two second magnetoresistive elements is shown.

[0100] In each of the two second magnetoresistive elements of the magnetic sensor according to Embodiment 2 of the present invention, two patterns 230 of the same shape including eight unit patterns 270 folded back having a plurality of curved portions are connected in series.

[0101] Such as Figure 8 As shown, eight unit patterns 270 are arranged and connected to each other on an imaginary circle C1. Such as Figure 9 As shown, the unit pattern 270 has nine curve...

Embodiment approach 3

[0106] Figure 10 It is a plan view showing the pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 3 of the present invention. Figure 11 It is a plan view showing unit patterns included in the pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 3 of the present invention.

[0107] Such as Figure 10 As shown, the two second magnetoresistive elements of the magnetic sensor according to Embodiment 3 of the present invention each have a pattern 330 including 32 unit patterns 370 having a plurality of curved portions and turning back.

[0108] Such as Figure 10 As shown, 32 unit patterns 370 are arranged in an imaginary rectangle C 2 connected to each other. It should be noted that the plurality of unit patterns 370 may also be arranged on a virtual polygon other than a virtual rectangle.

[0109] Such as Figure 11 As shown, the unit pattern 370 has 14 curved parts B between the starting ...

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Abstract

The invention provides a magnetic sensor. The respective resistance value change rates of the plurality of first magnetoresistive elements (120a, 120b) are greater than the respective resistance value change rates of the plurality of second magnetoresistive elements (130a, 130b). The plurality of first magneto-resistive elements (120a, 120b) respectively have a double spiral pattern in plan view. The double spiral pattern includes one spiral pattern, the other spiral pattern, and an S-shaped pattern or reverse S-shaped pattern in which one spiral pattern and the other spiral pattern are connected at the center of the double spiral pattern. pattern. Each of the plurality of first magnetoresistive elements (120a, 120b) makes the orientation of the double spiral pattern different in the circumferential direction so that the orientation of the S-shaped pattern or the reversed S-shaped pattern is different from each other.

Description

technical field [0001] The present invention relates to magnetic sensors, and more particularly to magnetic sensors comprising magnetoresistive elements. Background technique [0002] As prior documents disclosing magnetic sensors that realize improved isotropy in magnetic field detection, there are Japanese Patent Application Laid-Open No. 11-274598 (Patent Document 1), Japanese Patent Laid-Open No. 9-102638 (Patent Document 2), International Publication No. 2013 / 171977 (Patent Document 3), JP-A No. 2012-88225 (Patent Document 4), and JP-A No. 2013-250182 (Patent Document 5). [0003] In the magnetic sensor described in Patent Document 1, the pattern of the magnetoresistive element is spiral. Both ends of the spiral pattern are respectively formed on the outermost sides located on opposite sides. The pattern of the magnetoresistive element is substantially formed only by the bent portion. [0004] In the magnetic sensor described in Patent Document 2, the magnetoresistiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/09
CPCG01R33/09G01R33/0005G01R33/0023H10N50/10
Inventor 森大辅冈部修二
Owner MURATA MFG CO LTD