Method for forming groove portion of liquid crystal panel and insulating film
A liquid crystal panel, insulating film technology, applied in transistors, semiconductor/solid-state device parts, optics, etc., can solve problems such as image quality degradation
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no. 1 approach
[0027] figure 1 It is a cross-sectional view schematically showing the structure of the liquid crystal panel according to the first embodiment of the present invention. The liquid crystal panel is configured by attaching a liquid crystal layer 4 whose outer edge is surrounded by a sealing material 3 between a rectangular first glass substrate (corresponding to a first substrate) 1 and a second glass substrate (corresponding to a second substrate) 2 .
[0028] On one surface of the liquid crystal layer 4 side of the first glass substrate 1, along figure 1 A data signal line 51 for supplying a data signal to a source electrode of an unshown TFT (corresponding to a thin film transistor) respectively corresponding to a plurality of pixels is formed in the lateral direction of . The data signal line 51 can be obtained, for example, by patterning a film formed of a metal such as aluminum deposited by a sputtering method. In addition, on one surface of the first glass substrate 1, ...
no. 2 approach
[0052] In the first embodiment, the stopper film 61 b serving as the bottom 19 b of the groove portion 19 a is formed of the same material as that of the semiconductor layers 61 and 62 , while in the second embodiment, the same material as the source electrode 55 of the TFT is formed. The material forms the blocking film 55b.
[0053] image 3 It is a cross-sectional view schematically showing the structure of a liquid crystal panel according to a second embodiment of the present invention.
[0054] On the stopper film 61b formed by the same step as the step of forming the semiconductor layers 61 and 62 , the stopper film 55b is formed by the same step as the step of forming the source electrode 55 . The stopper film 55 b is made of the same metal material as the source electrode 55 . Instead of forming the stopper film 61 b , the stopper film 55 b may be formed on the gate insulating film 12 .
[0055] In the etching method such as dry etching used in the step of formi...
no. 3 approach
[0060] Dry etching is prevented by the stopper film 61 b formed on the gate insulating film 12 in the embodiment, but in the third embodiment, the stopper film 61 b is removed by dry etching.
[0061] Figure 4 It is a cross-sectional view schematically showing the structure of a liquid crystal panel according to a third embodiment of the present invention.
[0062] When the groove portion 19a is formed by dry etching, there is an excess of etching to prevent the film 61b from being Figure 4 Penetration occurs as shown. However, since the stopper film 61 b temporarily blocks dry etching to slow down the progress of etching, it is possible to prevent the gate insulating film 12 from being penetrated. The gate insulating film 12 thus left can prevent contamination components from entering the liquid crystal layer 4 .
[0063] As described above, according to the third embodiment, irrespective of the removal of the stopper film 61b, even in the state where the outer edg...
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