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A bias adaptive internal matching power amplifier tube and a power amplifier module based on the power amplifier tube

An internal matching, power amplifier tube technology, used in the fields of semiconductors, communications, and microelectronics, can solve problems such as the destruction of the best matching state of power amplifier modules, achieve good matching, make up for the impact, and solve the effect of reducing bandwidth

Active Publication Date: 2018-11-09
DYNAX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to propose a bias adaptive internal matching power amplifier tube and a power amplifier module based on the power amplifier tube. The problem that the best matching state of the power amplifier module is destroyed under different gate bias voltages

Method used

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  • A bias adaptive internal matching power amplifier tube and a power amplifier module based on the power amplifier tube
  • A bias adaptive internal matching power amplifier tube and a power amplifier module based on the power amplifier tube
  • A bias adaptive internal matching power amplifier tube and a power amplifier module based on the power amplifier tube

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Embodiment 1

[0036] Figure 2A , Figure 2B with Figure 2C They are respectively a top view, a cross-sectional view and a circuit diagram of the bias self-adaptive internal matching power amplifier tube provided by Embodiment 1 of the present invention.

[0037] Such as Figure 2A As shown, the power amplifier tube includes: a power chip 21, an internal matching capacitor 22 and a tube shell 23, and the tube shell 23 includes a tube shell base 231, a tube shell input terminal 232 and a tube shell output terminal 233, and the power amplifier tube may also include: a key wire 24 and capacitor bias terminal 25.

[0038] Such as Figure 2B As shown, ceramic materials 234 are disposed between the shell input end 232 , the shell output end 233 and the capacitor bias end 25 respectively. The power chip 21 includes a gate 211 , a source 213 and a drain 212 . The power chip 21 and the internal matching capacitor 22 are located on the package base 231 . The source 213 of the power chip 21 is...

Embodiment 2

[0058] Figure 7A , Figure 7B with Figure 7C They are respectively a top view, a cross-sectional view and a circuit diagram of the bias self-adaptive internal matching power amplifier tube provided by Embodiment 2 of the present invention.

[0059] In this embodiment, the upper electrode 221 of the inner matching capacitor 22 is the first electrode, and the lower electrode 222 of the inner matching capacitor 22 is the second electrode. Such as Figure 7A with Figure 7B As shown, the difference from Embodiment 1 of the present invention is that the second electrode 222 of the matching capacitor 22 in the tube of the power amplifier is electrically connected to the shell base 231 through the bonding wire 24, and the capacitance between the second electrode and the third electrode is directly connected to C2 short circuit, such as Figure 7C shown.

[0060] It should be noted that the power chip 21 in the power amplifier tube may be a laterally diffused metal oxide semic...

Embodiment 3

[0065] Figure 8 It is a cross-sectional view of the internal matching capacitor of the bias self-adaptive internal matching power amplifier tube provided by Embodiment 3 of the present invention. The difference from the power amplifier tube provided in Embodiment 1 or Embodiment 2 of the present invention is that the substrate 224 of the inner matching capacitor 22 of the power amplifier tube is provided with a through hole 226, and the side wall 227 of the through hole 226 is plated with metal. The capacitance between the second electrode 222 and the third electrode 225 is short-circuited.

[0066] In this embodiment, the number of through holes 226 is at least one, and the metal may be gold.

[0067] This structure communicates the second electrode 222 with the third electrode 225 through the through hole 226 . In actual application, the inner matching capacitor 22 is welded on the shell base 231 , so that the second electrode 222 of the inner matching capacitor 22 is ele...

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PUM

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Abstract

The invention discloses a bias self-adaptive internal matching power amplifier tube and a power amplification module based on the same. The power amplifier tube comprises a power chip, an internal matching capacitor, a tube shell and a bonding wire. The tube shell comprises a tube shell base, a tube shell input end and a tube shell output end. The internal matching capacitor comprises a first electrode, a second electrode, a third electrode, a substrate and a ferroelectric thin film located between the first electrode and the second electrode, wherein the first electrode is electrically connected with the input end of the tube shell and the grid electrode of the power chip; the second electrode is used for connecting with a control voltage; and the third electrode is electrically connected with the tube shell base. The source electrode of the power chip is electrically connected with the tube shell base; and the drain electrode of the power chip is electrically connected with the output end of the tube shell. The power amplifier tube provided by the embodiment has a fixed internal matching frequency band in the presence of different grid electrode bias voltages, so that the power amplification module based on the power amplifier tube has a fixed matching frequency band in the presence of different grid electrode bias voltages and can work at different grid electrode bias voltages steadily.

Description

technical field [0001] The invention relates to the technical fields of microelectronics, semiconductors and communications, in particular to a bias self-adaptive internal matching power amplifier tube and a power amplifier module based on the power amplifier tube. Background technique [0002] With the development of communication technology, the communication system is gradually developing towards high frequency, high power, high efficiency, broadband, miniaturization and supporting multiple working modes. As the core component of the radio frequency communication system, the performance of the power amplifier tube directly affects the performance of the entire communication system. As the power level of the power amplifier tube continues to increase, the size of the power chip used for the power amplifier tube becomes larger and larger, resulting in a decrease in the impedance of the power chip. If the power chip is directly packaged in the shell of the power amplifier t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/07H03F1/30H03F3/20
CPCH03F1/07H03F1/30H03F3/213
Inventor 杨天应张乃千
Owner DYNAX SEMICON