Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of cztse light absorbing layer based on simultaneous vacuum evaporation process

A light-absorbing layer and vacuum evaporation technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve problems such as process differences and low substrate temperature, achieve excellent film quality, solve Sn loss, and improve photoelectricity. The effect of conversion efficiency

Active Publication Date: 2017-12-08
韩国ENERGY技术硏究院
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Therefore, a technique was invented (Republic of Korea Laid-Open Patent No. 10-2013-0016528) that uses a vacuum evaporation method to improve manufacturing efficiency, and first sequentially vapor-deposits other elements, and then performs selenization treatment or sulfurization treatment, but this technique The substrate temperature is lower when vapor deposition is carried out, which is still different from the process of the present invention

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of cztse light absorbing layer based on simultaneous vacuum evaporation process
  • Manufacturing method of cztse light absorbing layer based on simultaneous vacuum evaporation process
  • Manufacturing method of cztse light absorbing layer based on simultaneous vacuum evaporation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] First, a soda-lime glass substrate on which a molybdenum back electrode was vapor-deposited to a thickness of about 1 μm by a DC sputtering process was prepared.

[0040] The substrate formed with the back electrode is installed in a simultaneous vacuum evaporation device provided with Cu, Zn, Sn and Se evaporation sources, the substrate is heated, and the substrate temperature (T sub ) was maintained at 500°C, and the shutters of all the evaporation sources were opened for 60 minutes of evaporation. The evaporation temperature of each evaporation source used for vapor deposition was 1330°C for the Cu evaporation source, 360°C for the Zn evaporation source, 1360°C for the Sn evaporation source, and 140°C for the Se evaporation source.

[0041] Next, lower the temperature of the substrate with only the shutter of the Cu evaporation source closed, perform evaporation using the Zn, Sn, and Se evaporation sources, and close the shutters of all the evaporation sources when t...

Embodiment 2

[0044] Prepare the same glass substrate as in Example 1, install it in a simultaneous vacuum evaporation device provided with Cu, Zn, Sn and Se evaporation sources, heat the substrate, and maintain T sub In the state of =500°C, the shutters of all the evaporation sources were opened, and evaporation was performed for 40 minutes. The evaporation temperature of each evaporation source used for vapor deposition was 1320°C for the Cu evaporation source, 360°C for the Zn evaporation source, 1480°C for the Sn evaporation source, and 140°C for the Se evaporation source.

[0045] Next, lower the temperature of the substrate with the switches of the Cu evaporation source and the Zn evaporation source closed, perform evaporation using the Sn and Se evaporation sources, and turn off the switches of all the evaporation sources when the temperature of the substrate reaches 400°C was removed from the simultaneous vacuum evaporator when the temperature of the substrate became 70°C.

[0046]...

Embodiment 3

[0067] First, a soda-lime glass substrate on which a molybdenum back electrode was vapor-deposited to a thickness of about 1 μm by a DC sputtering process was prepared.

[0068] The substrate formed with the back electrode was installed in a simultaneous vacuum evaporation device provided with Cu, Zn, Sn and Se evaporation sources, and the substrate was heated to maintain T sub =500°C with the shutters of all the evaporation sources open for 15 minutes, and then with the shutter of the Cu evaporation source closed while maintaining the temperature of the substrate, use the Zn, Sn, and Se evaporation sources 25 minutes for evaporation. The evaporation temperature of each evaporation source used for vapor deposition was 1430°C for the Cu evaporation source, 360°C for the Zn evaporation source, 1420°C for the Sn evaporation source, and 140°C for the Se evaporation source.

[0069] Next, lower the temperature of the substrate while reopening the shutter of the Cu evaporation sour...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a kind of method that manufactures high-quality CZTSe light-absorbing layer film based on simultaneous vacuum evaporation process, the method comprises: make Cu, Zn, Sn and Se evaporate simultaneously and evaporate to the step (step a) of substrate; A step of simultaneously evaporating Zn, Sn, and Se on the substrate while lowering the temperature of the substrate (step b). The present invention performs a simultaneous vacuum evaporation process at a high temperature, and then performs a further evaporation process while lowering the temperature of the substrate, thereby having the effect that the problem caused by Sn loss accompanying the high temperature simultaneous vacuum evaporation process can be solved. In addition, the film quality of the CZTSe light-absorbing layer formed by the production method of the present invention is excellent, so there is also an effect that the photoelectric conversion efficiency of a CZTSe solar cell produced using the CZTSe light-absorbing layer can be improved.

Description

technical field [0001] The present invention relates to a method for manufacturing a light-absorbing layer of a CZTSe solar cell, more particularly, to a method for manufacturing a light-absorbing layer of a CZTSe solar cell through a simultaneous vacuum evaporation process. Background technique [0002] In recent years, thin-film solar cells that can replace silicon solar cells have attracted increasing attention as the price of silicon has skyrocketed due to insufficient supply. The thickness of the thin-film solar cell can be made thin, so not only the consumption of materials is small, the weight is light, but also its application range is very wide. [0003] As materials for such thin-film solar cells, studies on amorphous silicon and CdTe, CIS-based (CuInSe 2 、CuIn 1-x Ga x Se 2 、CuIn 1-x Ga x S 2 etc.) research. [0004] CIS thin film is one of I-III-IV compound semiconductors, among which, CIGS solar cell maintains the highest conversion efficiency (about 20...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032
CPCH01L31/0322Y02E10/541Y02P70/50H01L31/042H01L31/06H01L31/18
Inventor 郭智惠尹载浩安承奎申基植安世镇赵阿拉尹庆勋鱼英柱赵俊植朴柱炯柳镇洙朴相炫崔慧琳
Owner 韩国ENERGY技术硏究院