Method for manufacturing cztse light absorbing layer on basis of simultaneous vacuum evaporation process
A light-absorbing layer and vacuum evaporation technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve problems such as process differences and low substrate temperature, achieve excellent film quality, solve Sn loss, and improve photoelectricity. The effect of conversion efficiency
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Embodiment 1
[0039] First, a soda lime glass substrate on which a molybdenum back electrode was vapor-deposited to a thickness of about 1 μm by a DC sputtering process was prepared.
[0040] The substrate on which the back electrode is formed is mounted in a vacuum evaporation device equipped with Cu, Zn, Sn, and Se evaporation sources, the substrate is heated, and the substrate temperature (T sub ) Open the shutters of all evaporation sources while maintaining the temperature at 500°C, and perform evaporation for 60 minutes. The evaporation temperature of each evaporation source used for vapor deposition is 1330°C for Cu evaporation source, 360°C for Zn evaporation source, 1360°C for Sn evaporation source, and 140°C for Se evaporation source.
[0041] Next, the temperature of the substrate is lowered with only the shutter of the Cu evaporation source closed, vapor deposition is performed using the Zn, Sn, and Se evaporation sources, and the shutters of all the evaporation sources are closed wh...
Embodiment 2
[0044] Prepare the same glass substrate as in Example 1, mount it in a vacuum evaporation device equipped with Cu, Zn, Sn, and Se evaporation sources, heat the substrate, and maintain T sub = 500°C, open the shutters of all evaporation sources, and perform evaporation for 40 minutes. The evaporation temperature of each evaporation source used for vapor deposition is 1320°C for Cu evaporation source, 360°C for Zn evaporation source, 1480°C for Sn evaporation source, and 140°C for Se evaporation source.
[0045] Next, lower the temperature of the substrate with the shutters of the Cu evaporation source and Zn evaporation source closed, and use Sn and Se evaporation sources for evaporation. When the substrate temperature becomes 400°C, all the evaporation sources are closed. When the temperature of the substrate becomes 70°C, remove it from the simultaneous vacuum evaporation device.
[0046] figure 2 It is a graph showing the process conditions of the simultaneous vacuum evaporatio...
Embodiment 3
[0067] First, a soda lime glass substrate on which a molybdenum back electrode was vapor-deposited to a thickness of about 1 μm by a DC sputtering process was prepared.
[0068] The substrate on which the back electrode is formed is mounted in a vacuum evaporation device equipped with Cu, Zn, Sn, and Se evaporation sources, and the substrate is heated to maintain T sub =500℃, open the shutters of all evaporation sources for 15 minutes, and then keep the temperature of the substrate, close only the shutters of the Cu evaporation source, use Zn, Sn and Se evaporation sources Evaporate in 25 minutes. The evaporation temperature of each evaporation source used for vapor deposition is 1430°C for Cu evaporation source, 360°C for Zn evaporation source, 1420°C for Sn evaporation source, and 140°C for Se evaporation source.
[0069] Next, the temperature of the substrate was lowered while the shutter of the Cu evaporation source was reopened, Zn, Sn, and Se evaporation sources were used fo...
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